RGS00TS65D datasheet(3/13 Pages) ROHM

부품명	RGS00TS65D

상세설명	650V 50A Field Stop Trench IGBT

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Data Sheet

RGS00TS65D

lIGBT Electrical Characteristics (at T

j = 25°C unless otherwise specified)

*2 Design assurance without measurement

Parameter

Symbol

Conditions

Values

Unit

Min.

Typ.

Max.

pF

Output Capacitance

Coes

VGE = 0V

-

134

-

Reverse Transfer Capacitance

Cres

f = 1MHz

Input Capacitance

Cies

VCE = 30V

-

1568

-

23

-

Total Gate Charge

Qg

VCE = 300V

-

58

-

nC

Gate - Emitter Charge

Qge

IC = 50A

-

15

-

Gate - Collector Charge

Qgc

VGE = 15V

-

24

-

Turn - on Delay Time

td(on)

IC = 50A, VCC = 400V

-

36

-

ns

Rise Time

tr

VGE = 15V, RG = 10Ω

-

21

-

Turn - off Delay Time

td(off)

Tj = 25°C

IC = 50A, VCC = 400V

-

37

-

115

-

Fall Time

tf

Inductive Load

-

91

-

Turn - on Switching Loss

Eon

*Eon includes diode

-

1.46

-

Reverse Bias Safe Operating Area

RBSOA

IC = 150A, VCC = 520V

FULL SQUARE

-

VP = 650V, VGE = 15V

RG = 50Ω, Tj = 175°C

-

145

-

Fall Time

tf

Inductive Load

-

147

-

ns

Rise Time

tr

VGE = 15V, RG = 10Ω

-

33

-

Turn - off Delay Time

mJ

Turn - off Switching Loss

Eoff

reverse recovery

-

1.29

-

Turn - on Switching Loss

Eon

*Eon includes diode

-

1.97

-

mJ

Turn - off Switching Loss

Eoff

reverse recovery

-

1.85

-

td(off)

Tj = 175°C

Turn - on Delay Time

td(on)

μs

VCC ≦ 360V

μs

VGE = 15V, Tj = 150°C

Short Circuit Withstand Time

tsc

*2

6

-

VCC ≦ 360V

VGE = 15V, Tj = 25°C

Short Circuit Withstand Time

tsc

8

-

3/11

2016.07 - Rev.A

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