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RGTH80TS65 데이터시트(PDF) 3 Page - Rohm

부품명 RGTH80TS65
상세설명  650V 40A Field Stop Trench IGBT
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제조업체  ROHM [Rohm]
홈페이지  http://www.rohm.com
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RGTH80TS65 데이터시트(HTML) 3 Page - Rohm

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Data Sheet
RGTH80TS65
IGBT Electrical Characteristics
(at Tj = 25°C unless otherwise specified)
Reverse Bias Safe Operating Area
RBSOA
IC = 160A, VCC = 520V
FULL SQUARE
-
VP = 650V, VGE = 15V
RG = 60Ω, Tj = 175°C
-
135
-
Fall Time
tf
Inductive Load
-
59
-
ns
Rise Time
tr
VGE = 15V, RG = 10Ω
-50-
Turn - off Delay Time
td(off)
Tj = 175°C
Turn - on Delay Time
td(on)
IC = 40A, VCC = 400V
-34-
-
120
-
Fall Time
tf
Inductive Load
-
47
-
Turn - on Delay Time
td(on)
IC = 40A, VCC = 400V
-34-
ns
Rise Time
tr
VGE = 15V, RG = 10Ω
-50-
Turn - off Delay Time
td(off)
Tj = 25°C
nC
Gate - Emitter Charge
Qge
IC = 40A
-21-
Gate - Collector Charge
Qgc
VGE = 15V
-29-
-35-
Total Gate Charge
Qg
VCE = 300V
-79-
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
pF
Output Capacitance
Coes
VGE = 0V
-85-
Reverse Transfer Capacitance
Cres
f = 1MHz
Input Capacitance
Cies
VCE = 30V
-
2210
-
3/9
2015.10 - Rev.C


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