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LB-52 데이터시트(PDF) 1 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
부품명 LB-52
상세설명  A Low-Noise Precision
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홈페이지  http://www.national.com
Logo NSC - National Semiconductor (TI)

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TLH8499
National Semiconductor
Linear Brief 52
Robert A Pease
December 1980
A Low-Noise Precision
Op Amp
It is well known that the voltage noise of an operational
amplifier can be decreased by increasing the emitter current
of the input stage The signal-to-noise ratio will be improved
by the increase of bias until the base current noise begins
to dominate The optimum is found at
Ie(optimum) e
KT
q
0hFE
rs
where rs is the output resistance of the signal source For
example in the circuit of
Figure 1 when rs e 1kX and
hFE e 500 the le optimum is about 500 mAor560 mA
However at this rich current level the DC base current will
cause a significant voltage error in the base resistance and
even after cancellation the DC drift will be significantly big-
ger than when le is smaller In this example lb e 1 mA so
lb c rs e 1 mV Even if the lb and rs are well matched at
each input it is not reasonable to expect the lb c rs to track
better than 5 or 10 mV C versus temperature
A new amplifier shown in
Figure 2 operates one transistor
pair at a rich current for low noise and a second pair at a
much leaner current for low base current Although this
looks like the familiar Darlington connection capacitors are
added so that the noise will be very low and the DC drift is
very good too In the example of
Figure 2 Q2 runs at
le e 500 mA and has very low noise Each half of Q1 is
operated at 11 mA e le It will have a low base current
(20 nA to 40 nA typical) and the offset current of the com-
posite op amp Ib1–lb2 will be very small 1 nA or 2 nA
Thus errors caused by bias current and offset current drift
vs temperature can be quite small less than 01 mV Catrs
e
1000X
The noise of Q1A and Q1B would normally be quite signifi-
cant about 6 nV
0Hz but the 10 mF capacitors completely
filter out the noise At all frequencies above 10 Hz Q2A and
Q2B act as the input transistors while Q1A and Q1B merely
buffer the lowest frequency and DC signals
For audio frequencies (20 Hz to 20 kHz) the voltage noise of
this amplifier is predicted to be 14 nV
0Hz which is quite
small compared to the Johnson noise of the 1 kX source
40 nV
0Hz A noise figure of 07 dB is thus predicted and
has been measured and confirmed Note that for best DC
balance R6 e 976X is added into the feedback path so
that the total impedance seen by the op amp at its negative
input is 1 kX But the 976X is heavily bypassed and the
total Johnson noise contributed by the feedback network is
below
nV
0Hz
To achieve lowest drift below 01 mV C R1 and R2
should of course be chosen to have good tracking tempco
below 5 ppm C and so should R3 and R4 When this is
done the drift referred to input will be well below 05 mV C
and this has been confirmed in the range a10 Cto a50 C
Overall we have designed a low-noise op amp which can
rival the noise of the best audio amplifiers and at the same
TLH8499 – 1
VOUT j (n a 1) VIN a VOS c (n a 1) a (lb2 b lb1) c rs c (n a 1) a Vnoise c (n a 1) a inoise c (rs a RIN) c (n a 1)
FIGURE 1 Conventional Low-Noise Operational Amplifier
C1995 National Semiconductor Corporation
RRD-B30M115Printed in U S A


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