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74HC2G66 데이터시트(PDF) 2 Page - NXP Semiconductors |
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2 / 20 page 2004 May 19 2 Philips Semiconductors Product specification Bilateral switches 74HC2G66; 74HCT2G66 FEATURES • Wide supply voltage range from 2.0 V to 9.0 V • Very low ON-resistance: –41 Ω (typical) at VCC = 4.5 V –30 Ω (typical) at VCC = 6.0 V –21 Ω (typical) at VCC = 9.0 V. • High noise immunity • Low power dissipation •± 25 mA switch current • SOT505-2 package • ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V. • Specified from −40 °C to +85 °C and −40 °C to +125 °C. DESCRIPTION The 74HC2G66/74HCT2G66 is a high-speed Si-gate CMOS device. The 74HC2G66/74HCT2G66 provides a dual analog switch. Each switch has two pins (nY and nZ) for input or output and an active HIGH enable input (pin E). When pin E is LOW, the belonging analog switch is turned off. QUICK REFERENCE DATA GND = 0 V; Tamb =25 °C; tr =tf = 6.0 ns; Vos is the output voltage at pins nY or nZ, whichever is assigned as an output. Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD =CPD × VCC2 × fi +(CL +CS) × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; CS = Switch capacitance in pF; VCC = supply voltage in Volts. 2. For 74HC2G66 the condition is VI = GND to VCC. For 74HCT2G66 the condition is VI = GND to VCC − 1.5 V. SYMBOL PARAMETER CONDITIONS TYPICAL UNIT HC2G HCT2G tPZH/tPZL turn-on time nE to Vos CL = 50 pF; RL =1kΩ;VCC = 4.5 V 12 13 ns tPHZ/tPLZ turn-off time nE to Vos CL = 50 pF; RL =1kΩ;VCC = 4.5 V 12 13 ns CI input capacitance 3.5 3.5 pF CPD power dissipation capacitance per switch notes 1 and 2 9 9 pF CS switch capacitance 8 8 pF |
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