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TSKS5400 데이터시트(PDF) 1 Page - Vishay Siliconix |
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TSKS5400 데이터시트(HTML) 1 Page - Vishay Siliconix |
1 / 5 page TSKS5400 www.vishay.com Vishay Semiconductors Rev. 2.4, 03-Sep-13 1 Document Number: 83780 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Infrared Emitting Diode, 950 nm, GaAs DESCRIPTION The TSKS5400-FSZ is an infrared, 950 nm emitting diode in GaAs technology with high radiant power, molded in a clear plastic package. FEATURES • Package type: leaded • Package form: side view lens • Dimensions (L x W x H in mm): 5 x 2.65 x 5 • Peak wavelength: λp = 950 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 30° • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors • Package matched with detector TEKS5400 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Photointerrupters • Transmissive sensors, gap sensors • Reflective sensors Note • Test conditions see table “Basic Characteristics” Note • MOQ: minimum order quantity 14354-1 PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) TSKS5400-FSZ 4.5 ± 30 950 800 ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TSKS5400-FSZ Tape and ammopack MOQ: 2000 pcs, 2000 pcs/ammopack Side view lens ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage VR 6V Forward current IF 100 mA Surge forward current tp ≤ 100 μs IFSM 2A Power dissipation PV 170 mW Junction temperature Tj 100 °C Operating temperature range Tamb - 25 to + 85 °C Storage temperature range Tstg - 40 to + 100 °C Soldering temperature t ≤ 5 s, 2 mm from case Tsd 260 °C Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB RthJA 270 K/W |
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