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ES1BW 데이터시트(PDF) 1 Page - Zibo Seno Electronic Engineering Co.,Ltd |
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ES1BW 데이터시트(HTML) 1 Page - Zibo Seno Electronic Engineering Co.,Ltd |
1 / 2 page ES1B W 50 100 150 200 300 400 500 600 V 35 70 105 140 210 280 350 420 V 4 pF 1.0A GLASS PASSIVATED SUPERFAST RECOVERY DIODE 30 °C/W nS V Reverse Recovery Time (Note 2) t ES1AW – ES1JW Characteristic Symbol ES1AW – ES1JW 25 A Weight: 0.01 grams (approx.) Case: SOD-123FL, Molded Plastic Surge Overload Rating to 25A Peak Ultra-Fast Recovery Time Ideally Suited for Automatic Assembly Low Power Loss Classification Rating 94V-O -65 to +150 °C Features ! ! Low Forward Voltage Drop, High Efficiency ! ! ! ! Plastic Case Material has UL Flammability Mechanical Data ! ! Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 ! Polarity: Cathode Band or Cathode Notch ! Marking: Type Number ! ! Lead Free: For RoHS / Lead Free Version Maximum Ratings and Electrical Characteristics @T A=25°C unless otherwise specified Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR RMS Reverse Voltage VR(RMS) Average Rectified Output Current @TL = 100°C IO 1.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM Forward Voltage @IF = 1.0A VFM Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 100°C IRM 10 500 µA Typical Junction Capacitance (Note 2) Cj Typical Thermal Resistance (Note 3) RJL Operating and Storage Temperature Range Tj, TSTG Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. 3. Mounted on P.C. Board with 8.0mm2 land area. 1 of 2 2.8±0.1 Cathode Band Top View 3.7±0.2 0.6±0.25 SOD - 123FL Dimensions in millimeters Glass passivated device ! ! ES1AW UNITS Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com rr 1.0 1.3 1.7 35 ES1CW ES1DW ES1EW ES1GWES1HWES1JW Alldatasheet |
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