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SI1903DL 데이터시트(PDF) 1 Page - Vishay Siliconix |
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SI1903DL 데이터시트(HTML) 1 Page - Vishay Siliconix |
1 / 4 page Si1903DL Vishay Siliconix Document Number: 71081 S-21374—Rev. B, 12-Aug-02 www.vishay.com 2-1 Dual P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.995 @ VGS = -4.5 V "0.44 -20 1.190 @ VGS = -3.6 V "0.40 1.80 @ VGS = -2.5 V "0.32 Marking Code QA XX Lot Traceability and Date Code Part # Code SOT-363 SC-70 (6-LEADS) 6 4 1 2 3 5 Top View S1 G1 D2 D1 G2 S2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS -20 Gate-Source Voltage VGS "12 V _ a TA = 25_C "0.44 "0.41 Continuous Drain Current (TJ = 150_C)a TA = 85_C ID "0.31 "0.30 Pulsed Drain Current IDM "1.0 A Continuous Diode Current (Diode Conduction)a IS -0.25 -0.23 TA = 25_C 0.30 0.27 Maximum Power Dissipationa TA = 85_C PD 0.16 0.14 W Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t v 5 sec 360 415 Maximum Junction-to-Ambienta Steady State RthJA 400 460 _C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 300 350 C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. |
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