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EC732301 데이터시트(PDF) 1 Page - E-CMOS Corporation

부품명 EC732301
상세설명  P chanel MOSFET
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제조업체  E-CMOS [E-CMOS Corporation]
홈페이지  http://www.ecmos.com.tw/
Logo E-CMOS - E-CMOS Corporation

EC732301 데이터시트(HTML) 1 Page - E-CMOS Corporation

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EC732301
P chanel MOSFET
E-CMOS Corp. (www.ecmos.com.tw)
Page 1 of 6
5E06N-Rev.F001
VDSS
-20V
RDS(on)
60mΩ (typ.)
ID
-3A
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high
repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in
power switching application and a wide variety of other applications.
Features and Benefits
◆ Advanced MOSFET process technology
◆ Special designed for PWM, load switching and
general purpose applications
◆ Ultra low on-resistance with low gate charge
◆ Fast switching and reverse body recovery
◆ 150℃ operating temperature
Main Product Characteristics
Package Marking and Ordering Information
Device
Device Package
Reel Size
Tape width
Quantity
EC732301B1R
SOT23
Ø 180mm
8 mm
3000 units
Absolute Maximum Ratings(TA=25℃unless otherwise noted)
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
-3
A
ID @ TC = 70°C
Continuous Drain Current, VGS @ 10V
-1.8
IDM
Pulsed Drain Current
-10
PD @TC = 25°C
Power Dissipation
1.25
W
VDS
Drain-Source Voltage
-20
V
VGS
Gate-to-Source Voltage
± 12
V
TJ TSTG
Operating Junction and Storage Temperature Range
-55 to +150
°C


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