전자부품 데이터시트 검색엔진 |
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EC732301 데이터시트(PDF) 1 Page - E-CMOS Corporation |
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EC732301 데이터시트(HTML) 1 Page - E-CMOS Corporation |
1 / 6 page EC732301 P chanel MOSFET E-CMOS Corp. (www.ecmos.com.tw) Page 1 of 6 5E06N-Rev.F001 VDSS -20V RDS(on) 60mΩ (typ.) ID -3A ① Description It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Features and Benefits ◆ Advanced MOSFET process technology ◆ Special designed for PWM, load switching and general purpose applications ◆ Ultra low on-resistance with low gate charge ◆ Fast switching and reverse body recovery ◆ 150℃ operating temperature Main Product Characteristics Package Marking and Ordering Information Device Device Package Reel Size Tape width Quantity EC732301B1R SOT23 Ø 180mm 8 mm 3000 units Absolute Maximum Ratings(TA=25℃unless otherwise noted) Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V -3 ① A ID @ TC = 70°C Continuous Drain Current, VGS @ 10V -1.8 ① IDM Pulsed Drain Current ② -10 PD @TC = 25°C Power Dissipation ③ 1.25 W VDS Drain-Source Voltage -20 V VGS Gate-to-Source Voltage ± 12 V TJ TSTG Operating Junction and Storage Temperature Range -55 to +150 °C |
유사한 부품 번호 - EC732301 |
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유사한 설명 - EC732301 |
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