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BU808DFH 데이터시트(PDF) 2 Page - STMicroelectronics |
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BU808DFH 데이터시트(HTML) 2 Page - STMicroelectronics |
2 / 7 page THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 2.98 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICES Collector Cut-off Current (VBE = 0) VCE = 1400 V 400 µA IEBO Emitter Cut-off Current (IC = 0) VEB = 5 V 100 mA VCE(sat) ∗ Collector-Emitter Saturation Voltage IC = 5 A IB = 0.5 A 1.6 V VBE(sat) ∗ Base-Emitter Saturation Voltage IC = 5 A IB = 0.5 A 2.1 V hFE ∗ DC Current Gain IC = 5 A VCE = 5 V IC = 5 A VCE = 5 V TC = 100 o C 60 20 230 ts tf INDUCTIVE LOAD Storage Time Fall Time VCC = 150 V IC = 5 A IB1 = 0.5 A VBE(off) = -5 V 3 0.8 µs µs ts tf INDUCTIVE LOAD Storage Time Fall Time VCC = 150 V IC = 5 A IB1 = 0.5 A VBE(off) = -5 V TC = 100 oC 2 0.8 µs µs VF Diode Forward Voltage IF = 5 A 3 V ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area Thermal Impedance BU808DFH 2/7 |
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