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LM2770SD-12157 데이터시트(PDF) 4 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
부품명 LM2770SD-12157
상세설명  High Efficiency Switched Capacitor Step-Down DC/DC Regulator with Sleep Mode
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제조업체  NSC [National Semiconductor (TI)]
홈페이지  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM2770SD-12157 데이터시트(HTML) 4 Page - National Semiconductor (TI)

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Electrical Characteristics (Notes 2, 9) (Continued)
Limits in standard typeface are for T
J =25
oC. Limits in boldface type apply over the full operating junction temperature range
(-30˚C
≤ T
J
≤ +105˚C) . Unless otherwise noted, specifications apply to the LM2770 Typical Application Circuit (pg. 1) with: V
IN
= 3.6V; V(EN) = V
SEL = 1.8V, V(SLEEP) = 0V, CIN =COUT = 10µF, C1 =C2 = 1.0µF. (Note 10)
Symbol
Parameter
Condition
Min
Typ
Max
Units
V
LDO-1215
LM2770-1215:
1.5V Output Voltage Regulation
- SLEEP Mode
3.0V
≤ V
IN
≤ 5.5V,
0mA
≤ I
OUT
≤ 20mA,
V
SEL= 0V, V(SLEEP) = 1.8V
1.435
1.495
1.555
V
LM2770-1215:
1.2V Output Voltage Regulation
- SLEEP Mode
3.0V
≤ V
IN
≤ 5.5V,
0mA
≤ I
OUT
≤ 20mA,
V
SEL = 0V, V(SLEEP) = 1.8V
1.145
1.205
1.265
V
LDO-12157
LM2770-12157:
1.575V Output Voltage
Regulation - SLEEP Mode
3.0V
≤ V
IN
≤ 5.5V,
0mA
≤ I
OUT
≤ 20mA,
V
SEL= 0V, V(SLEEP) = 1.8V
1.520
1.575
1.630
V
LM2770-12157:
1.2V Output Voltage Regulation
- SLEEP Mode
3.0V
≤ V
IN
≤ 5.5V,
0mA
≤ I
OUT
≤ 20mA,
V
SEL = 0V, V(SLEEP) = 1.8V
1.150
1.210
1.270
Specifications Below Apply to All LM2770 Options
E
Power Efficiency
V
IN = 3.6V, IOUT = 150mA
V
OUT =1.5V
82
%
E
AVG
Average Eficiency over Li-Ion
Input Voltage Range (Note 11)
3.0V
≤ V
IN
≤ 4.2V
I
OUT = 200mA, VOUT = 1.5V
73
%
I
Q
Quiescent Supply Current:
Full-power Mode
2.7V
≤ V
IN
≤ 5.5V
I
OUT = 0mA
V(SLEEP) = 0V
55
75
µA
I
SLEEP
Quiescent Supply Current:
Sleep Mode
2.7V
≤ V
IN
≤ 5.5V
I
OUT = 0mA
V(SLEEP) = 1.8V
50
65
µA
I
SD
Shutdown Current
2.7V
≤ V
IN
≤ 5.5V
V(EN) = 0V
0.1
0.5
µA
I
CL
Current Limit - Sleep Mode
0V
≤ V
OUT
≤ 0.2V
V(SLEEP) = 1.8V
60
mA
t
ON
Turn-on Time
V
IN = 3.6V, COUT = 10µF
200
µs
F
SW
Switching Frequency
2.7V
≤ V
IN
≤ 5.5V
475
700
925
kHz
Logic Pin Specifications: EN, ENA, ENB
V
IL
Logic-low Input Voltage
2.7V
≤ V
IN
≤ 5.5V
0
0.4
V
V
IH
Logic-high Input Voltage
2.7V
≤ V
IN
≤ 5.5V
1.0
V
IN
V
I
IH
Logic-high Input Current:
SLEEP and V
SEL pins
Logic Input = 3.0V
0.1
µA
I
IH-EN
Logic-high Input Current: EN pin
(Note 12)
V(EN) = 1.8V
6
µA
I
IL
Logic-low Input Current: All
Logic Pins
Logic Input = 0V
0
µA
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Operating Ratings are conditions under which operation of
the device is guaranteed. Operating Ratings do not imply guaranteed performance limits. For guaranteed performance limits and associated test conditions, see the
Electrical Characteristics tables.
Note 2: All voltages are with respect to the potential at the GND pin.
Note 3: Internal thermal shutdown circuitry protects the device from permanent damage. Thermal shutdown engages at TJ=150
oC (typ.) and disengages at
TJ=140
oC (typ.).
Note 4: Short circuit protection circuitry protects the part from immediate destructive failure when VOUT is shorted to GND. Applying a continuous GND short to the
output may shorten the lifetime of the device.
Note 5: For detailed information on soldering requirements and recommendations, please refer to National Semiconductor’s Application Note 1187 (AN-1187):
Leadless Leadframe Package (LLP).
Note 6: The Human body model is a 100pF capacitor discharged through a 1.5k
Ω resistor into each pin. The machine model is a 200pF capacitor discharged
directly into each pin. MIL-STD-883 3015.7
www.national.com
4


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