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LM2770SD-12157 데이터시트(PDF) 4 Page - National Semiconductor (TI) |
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LM2770SD-12157 데이터시트(HTML) 4 Page - National Semiconductor (TI) |
4 / 14 page Electrical Characteristics (Notes 2, 9) (Continued) Limits in standard typeface are for T J =25 oC. Limits in boldface type apply over the full operating junction temperature range (-30˚C ≤ T J ≤ +105˚C) . Unless otherwise noted, specifications apply to the LM2770 Typical Application Circuit (pg. 1) with: V IN = 3.6V; V(EN) = V SEL = 1.8V, V(SLEEP) = 0V, CIN =COUT = 10µF, C1 =C2 = 1.0µF. (Note 10) Symbol Parameter Condition Min Typ Max Units V LDO-1215 LM2770-1215: 1.5V Output Voltage Regulation - SLEEP Mode 3.0V ≤ V IN ≤ 5.5V, 0mA ≤ I OUT ≤ 20mA, V SEL= 0V, V(SLEEP) = 1.8V 1.435 1.495 1.555 V LM2770-1215: 1.2V Output Voltage Regulation - SLEEP Mode 3.0V ≤ V IN ≤ 5.5V, 0mA ≤ I OUT ≤ 20mA, V SEL = 0V, V(SLEEP) = 1.8V 1.145 1.205 1.265 V LDO-12157 LM2770-12157: 1.575V Output Voltage Regulation - SLEEP Mode 3.0V ≤ V IN ≤ 5.5V, 0mA ≤ I OUT ≤ 20mA, V SEL= 0V, V(SLEEP) = 1.8V 1.520 1.575 1.630 V LM2770-12157: 1.2V Output Voltage Regulation - SLEEP Mode 3.0V ≤ V IN ≤ 5.5V, 0mA ≤ I OUT ≤ 20mA, V SEL = 0V, V(SLEEP) = 1.8V 1.150 1.210 1.270 Specifications Below Apply to All LM2770 Options E Power Efficiency V IN = 3.6V, IOUT = 150mA V OUT =1.5V 82 % E AVG Average Eficiency over Li-Ion Input Voltage Range (Note 11) 3.0V ≤ V IN ≤ 4.2V I OUT = 200mA, VOUT = 1.5V 73 % I Q Quiescent Supply Current: Full-power Mode 2.7V ≤ V IN ≤ 5.5V I OUT = 0mA V(SLEEP) = 0V 55 75 µA I SLEEP Quiescent Supply Current: Sleep Mode 2.7V ≤ V IN ≤ 5.5V I OUT = 0mA V(SLEEP) = 1.8V 50 65 µA I SD Shutdown Current 2.7V ≤ V IN ≤ 5.5V V(EN) = 0V 0.1 0.5 µA I CL Current Limit - Sleep Mode 0V ≤ V OUT ≤ 0.2V V(SLEEP) = 1.8V 60 mA t ON Turn-on Time V IN = 3.6V, COUT = 10µF 200 µs F SW Switching Frequency 2.7V ≤ V IN ≤ 5.5V 475 700 925 kHz Logic Pin Specifications: EN, ENA, ENB V IL Logic-low Input Voltage 2.7V ≤ V IN ≤ 5.5V 0 0.4 V V IH Logic-high Input Voltage 2.7V ≤ V IN ≤ 5.5V 1.0 V IN V I IH Logic-high Input Current: SLEEP and V SEL pins Logic Input = 3.0V 0.1 µA I IH-EN Logic-high Input Current: EN pin (Note 12) V(EN) = 1.8V 6 µA I IL Logic-low Input Current: All Logic Pins Logic Input = 0V 0 µA Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Operating Ratings are conditions under which operation of the device is guaranteed. Operating Ratings do not imply guaranteed performance limits. For guaranteed performance limits and associated test conditions, see the Electrical Characteristics tables. Note 2: All voltages are with respect to the potential at the GND pin. Note 3: Internal thermal shutdown circuitry protects the device from permanent damage. Thermal shutdown engages at TJ=150 oC (typ.) and disengages at TJ=140 oC (typ.). Note 4: Short circuit protection circuitry protects the part from immediate destructive failure when VOUT is shorted to GND. Applying a continuous GND short to the output may shorten the lifetime of the device. Note 5: For detailed information on soldering requirements and recommendations, please refer to National Semiconductor’s Application Note 1187 (AN-1187): Leadless Leadframe Package (LLP). Note 6: The Human body model is a 100pF capacitor discharged through a 1.5k Ω resistor into each pin. The machine model is a 200pF capacitor discharged directly into each pin. MIL-STD-883 3015.7 www.national.com 4 |
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