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SL04 데이터시트(PDF) 2 Page - Vishay Siliconix |
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SL04 데이터시트(HTML) 2 Page - Vishay Siliconix |
2 / 5 page www.vishay.com 2 Document Number 85687 Rev. 3, 21-Feb-03 VISHAY SL02 to SL04 Vishay Semiconductors Maximum Thermal Resistance Tamb = 25 °C, unless otherwise specified 2)Mounted on epoxy substrate with 3 x 3mm Cu pads (≥ 40 µm thick) Electrical Characteristics Tamb = 25 °C, unless otherwise specified 1) Pulse test: 300 µs pulse width, 1 % duty cycle Typical Characteristics (Tamb = 25 °C unless otherwise specified) Parameter Symbol Value Unit Thermal resistance junction to ambient air 2) RθJA 180 K/W Maximum operating junction temperature TJ 125 °C Storage temperature range TSTG - 55 to 150 °C Parameter Test condition Part Symbol Typ. Max Unit Instaneous forward voltage at 0.5 1) SL02 VF 0.360 0.385 V SL03 VF 0.395 0.43 V SL04 VF 0.450 0.51 V Typical instantaneous forward voltage 1.1 A SL02 VF 0.420 V 1.1 A SL03 VF 0.450 V 1.1 A SL04 VF 0.530 V Maximum DC reverse current at rated DC blocking voltage TA = 25 °C SL02 IR 250 µA TA = 100 °C SL02 IR 8.0 mA TA = 25 °C SL03 IR 130 µA TA = 100 °C SL03 IR 6.0 mA TA = 25 °C SL04 IR 20 µA TA = 100 °C SL04 IR 6.0 mA Figure 1. Forward Current Derating Curve 0 10 30 50 70 90 110 130 0 0.5 1.5 1.0 150 Lead temperature (°C) 17379 Figure 2. Typical Junction Capacitance 12 10 50 100 150 200 250 0 2 4 6 8 10 Reverse Voltage (V) SL02 SL04 17380 |
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