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BY459F-1500 데이터시트(PDF) 1 Page - NXP Semiconductors |
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BY459F-1500 데이터시트(HTML) 1 Page - NXP Semiconductors |
1 / 6 page Philips Semiconductors Product specification Rectifier diode BY459F-1500 fast, high-voltage GENERAL DESCRIPTION QUICK REFERENCE DATA Glass-passivated double diffused SYMBOL PARAMETER MAX. UNIT rectifier diode in a full pack plastic envelope, featuring fast forward V RRM Repetitive peak reverse voltage 1500 V recovery and low forward recovery V F Forward voltage 1.2 V voltage. The device is intended for I FWM Working peak forward current 10 A use in multi-sync monitor horizontal I FRM Repetitive peak forward current 100 A deflection circuits. t fr Forward recovery time 250 ns V fr Forward recovery voltage 14 V PINNING - SOD100 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 cathode 2 anode case isolated LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V RSM Non-repetitive peak reverse - 1500 V voltage during flash-over of picture tube V RRM Repetitive peak reverse voltage t = 6 µs; f = 82kHz - 1500 V V RWM Crest working reverse voltage - 1300 V I FWM Working peak forward current 1 f = 82kHz; T hs ≤ 127 ˚C - 10 A I FRM Repetitive peak forward current t = 100 µs - 100 A I FSM Non-repetitive peak forward t = 10 ms - 100 A current t = 8.3 ms - 110 A sinusoidal; T j = 150 ˚C prior to surge; with reapplied V RWM(max) T stg Storage temperature -40 150 ˚C T j Operating junction temperature - 150 ˚C ISOLATION LIMITING VALUE & CHARACTERISTIC T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V isol Repetitive peak voltage from R.H. ≤ 65% ; clean and dustfree - 1500 V both terminals to external heatsink C isol Capacitance from cathode to f = 1 MHz - 12 - pF external heatsink 12 case k a 1 2 1 Including worst case forward recovery losses, see fig:5. August 1996 1 Rev 1.200 |
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유사한 설명 - BY459F-1500 |
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