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IKA06N60T 데이터시트(Datasheet) 8 Page - Infineon Technologies AG

부품명 IKA06N60T
상세내용  Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
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제조사  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
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IKA06N60T
^
TrenchStop series
Power Semiconductors
8
Rev. 2 Oct-04
0A
2A
4A
6A
8A
10A
0,0 mJ
0,1 mJ
0,2 mJ
0,3 mJ
0,4 mJ
0,5 mJ
0,6 mJ
E
ts*
E
on*
*) E
on and Ets include losses
due to diode recovery
E
off
10Ω
30Ω
55Ω
80Ω
0,0 mJ
0,1 mJ
0,2 mJ
0,3 mJ
0,4 mJ
E
ts*
E
on*
*) E
on and Ets include losses
due to diode recovery
E
off
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ=175°C,
VCE=400V, VGE=0/15V, RG=23Ω,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ=175°C,
VCE = 400V, VGE = 0/15V, IC = 6A,
Dynamic test circuit in Figure E)
50°C
100°C
150°C
0,0mJ
0,1mJ
0,2mJ
0,3mJ
0,4mJ
E
ts*
E
on*
*) E
on and E ts in c lu de lo s s e s
due to diode recovery
E
off
200V
300V
400V
500V
0,0m J
0,1m J
0,2m J
0,3m J
0,4m J
0,5m J
E
ts*
E
on*
*) E
on a nd E ts in clud e lo sses
due to diode recovery
E
off
TJ, JUNCTION TEMPERATURE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE=400V,
VGE = 0/15V, IC = 6A, RG = 23Ω,
Dynamic test circuit in Figure E)
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ = 175°C,
VGE = 0/15V, IC = 6A, RG = 23Ω,
Dynamic test circuit in Figure E)




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