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IKA06N60T 데이터시트(Datasheet) 2 Page - Infineon Technologies AG

부품명 IKA06N60T
상세내용  Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
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제조사  INFINEON [Infineon Technologies AG]
홈페이지  http://www.infineon.com
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IKA06N60T
^
TrenchStop series
Power Semiconductors
2
Rev. 2 Oct-04
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
RthJC
5.3
Diode thermal resistance,
junction – case
RthJCD
6.5
Thermal resistance,
junction – ambient
RthJA
80
K/W
Electrical Characteristic, at Tj = 25
°C, unless otherwise specified
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
Static Characteristic
Collector-emitter breakdown voltage
V(BR)CES VGE=0V,
IC=0.25mA
600
-
-
Collector-emitter saturation voltage
VCE(sat)
VGE = 15V, IC=6A
Tj=25
°C
Tj=175
°C
-
-
1.5
1.8
2.05
Diode forward voltage
VF
VGE=0V, IF=6A
Tj=25
°C
Tj=175
°C
-
-
1.6
1.6
2.05
-
Gate-emitter threshold voltage
VGE(th)
IC=0.18mA,
VCE=VGE
4.1
4.6
5.7
V
Zero gate voltage collector current
ICES
VCE=600V,VGE=0V
Tj=25
°C
Tj=175
°C
-
-
-
-
40
700
µA
Gate-emitter leakage current
IGES
VCE=0V,VGE=20V
-
-
100
nA
Transconductance
gfs
VCE=20V, IC=6A
-
3.6
-
S
Integrated gate resistor
RGint
none




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