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부품명 INA253
상세내용  High Voltage, Bidirectional, Zero-Drift, Current-Shunt Monitor with Integrated 2-mΩ Precision Low Inductive Shunt Resistor
PDF  24 Pages
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2.7V to 5.5V
Supply
INA253
REF2
VS
OUT
GND
IN+
IN-
-
+
REF1
48V
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Folder
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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. ADVANCE INFORMATION for pre-production products; subject to
change without notice.
INA253
SLOS954 – MAY 2018
INA253 High Voltage, Bidirectional, Zero-Drift,
Current-Shunt Monitor with Integrated 2-mΩ Precision Low Inductive Shunt Resistor
1
1 Features
1
Precision Integrated Shunt Resistor
Shunt Resistor: 2 mΩ
Shunt Inductance: 3 nH
Shunt Resistor Tolerance: 0.1% (Max)
±15 A Continuous from – 40°C to 85°C
0°C to 125°C Temperature Coefficient:
10 ppm/°C
Higher –3 dB Bandwidth of 380 Khz
Enhanced PWM rejection
Excellent CMRR
>120-dB DC CMRR
90-dB AC CMRR at 50 kHz
Accuracy:
Gain:
Gain Error: 0.75% (Max)
Gain Drift: 45 ppm/°C (Max)
Offset:
Offset Current: ±12.5 mA (Max)
Offset Drift: 125 µA/°C (Max)
Wide Common-Mode Range: –4 V to 80 V
Available Gains: 100 mV/A, 200 mV/A,
and 400 mV/A
Quiescent Current: 3 mA (Max)
2 Applications
Solenoid and Valve Controls
Transmission control
Motor Controls
Actuator Controls
DC-DC Converters
Factory Automation
3 Description
The INA253 is a voltage-output, current sense
amplifier with an integrated shunt resistor of 2 mΩ.
The INA253 is designed to monitor bi-directional
currents over a wide command mode range from
–4 V to 80 V, independent of the supply voltage.
Three fixed gains are available: 100 mV/A, 200 mV/A,
and 400 mV/A. The integration of the precision
resistor with a zero-drift chopped amplifier provides
calibration equivalent measurement accuracy, ultra-
low temperature drift performance of 15 ppm/°C, and
an optimized Kelvin layout for the sensing resistor.
The INA253 is designed with enhanced PWM
rejection circuitry to suppress large (dv/dt) signals to
enable real time continuous current measurements.
The measurements are critical for in-line current
measurements in a motor drive application and for
Solenoid valve control applications.
This device operates from a single 2.7-V to 5.5-V
power supply, drawing a maximum of 3 mA of supply
current. All gain versions are specified over the
extended operating temperature range (–40°C to
125°C) and are available in an 20-pin TSSOP
package.
Device Information(1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
INA253
TSSOP (20)
6.50 mm × 4.40 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Simple Schematic
 2 page
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Table of Contents
1
Features .................................................................. 1
2
Applications ........................................................... 1
3
Description ............................................................. 1
4
Revision History..................................................... 2
5
Device Comparison Table..................................... 3
6
Pin Configuration and Functions ......................... 3
7
Specifications......................................................... 4
7.1
Absolute Maximum Ratings ...................................... 4
7.2
ESD Ratings.............................................................. 4
7.3
Recommended Operating Conditions ....................... 4
7.4
Thermal Information .................................................. 4
7.5
Electrical Characteristics........................................... 5
8
Detailed Description .............................................. 7
8.1
Overview ................................................................... 7
8.2
Functional Block Diagram ......................................... 7
8.3
Feature Description................................................... 7
8.4
Device Functional Modes........................................ 10
9
Application and Implementation ........................ 14
9.1
Application Information............................................ 14
9.2
Typical Applications ............................................... 16
10
Power Supply Recommendations ..................... 18
11
Layout................................................................... 19
11.1
Layout Guidelines ................................................. 19
11.2
Layout Example .................................................... 19
12
Device and Documentation Support ................. 20
12.1
Receiving Notification of Documentation Updates 20
12.2
Community Resources.......................................... 20
12.3
Trademarks ........................................................... 20
12.4
Electrostatic Discharge Caution ............................ 20
12.5
Glossary ................................................................ 20
13
Mechanical, Packaging, and Orderable
Information ........................................................... 20
4 Revision History
DATE
REVISION
NOTES
May 2018
*
Initial release.
 3 page
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5 Device Comparison Table
PRODUCT
GAIN (mV/A)
INA253A1
100
INA253A2
200
INA253A3
400
6 Pin Configuration and Functions
PW Package
20-Pin TSSOP
Top View
Pin Functions
PIN
I/O
DESCRIPTION
NO.
NAME
1
IS–
Analog input
Connect to load
2
IS–
Analog input
Connect to load
3
IS–
Analog input
Connect to load
4
SH-
Analog output
Kelvin connection to internal shunt. Connect to IN- if no filtering is needed
5
IN-
Analog input
Voltage input from load side of shunt resistor
6
GND
Ground
7
DNC1
Do not connect this pin to any potential, leave it floating.
8
NC
No connect
9
VS
Analog
Power supply, 2.7 V to 5.5 V
10
REF2
Analog input
Reference voltage 2, 0 V to VS
11
REF1
Analog input
Reference voltage 1, 0 V to VS
12
NC
No connect
13
OUT
Analog
Output voltage
14
DNC2
Do not connect this pin to any potential, leave it floating.
15
NC
Analog
Reserved, Recommended to connect it to Ground
16
IN+
Analog input
Voltage input from supply side of shunt resistor
17
SH+
Analog output
Kelvin connection to internal shunt. Connect to IN+ if no filtering is needed
18
IS+
Analog input
Connect to supply
19
IS+
Analog input
Connect to supply
20
IS+
Analog input
Connect to supply
 4 page
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(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
MAX
UNIT
Supply voltage
6
V
Shunt input current (ISENSE)
Continuous
±15
A
Analog inputs (IS+, IS-)
Common-mode
GND – 6
90
V
Analog inputs (VIN+, VIN-)
Differential (VIN+) – (VIN–)
–80
80
V
Common-mode
GND - 6
90
Analog inputs (REF1, REF2, NC)
GND – 0.3
VS + 0.3
V
Analog outputs (SH+, SH-)
Common-mode
GND – 6
90
V
Analog output (OUT)
GND – 0.3
VS + 0.3
V
Temperature
Operating, TA
–55
150
°C
Junction, TJ
150
Storage, Tstg
–65
150
°C
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±2000
V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)
±1000
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
VCM
Common-mode input voltage
-4
80
V
VS
Operating supply voltage
2.7
5.5
V
TA
Operating free-air temperature
-40
+125
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
7.4 Thermal Information
THERMAL METRIC(1)
INA253
UNIT
PW (TSSOP)
20 PINS
RθJA
Junction-to-ambient thermal resistance
110.6
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
54.1
°C/W
RθJB
Junction-to-board thermal resistance
87.5
°C/W
ψJT
Junction-to-top characterization parameter
114.1
°C/W
ψJB
Junction-to-board characterization parameter
87.5
°C/W
 5 page
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(1)
The internal shunt resistor is intended to be used with the internal amplifier and is not intended to be used as a stand-alone resistor. See
the Integrated Shunt Resistor section for more information.
(2)
See Maximum Continuous Current for additional information on the current derating and review layout recommendations to improve the
current handling capability of the device at higher temperatures.
(3)
System gain error includes amplifier gain error and the integrated sense resistor tolerance. System gain error does not include the stress
related characteristics of the integrated sense resistor. These characteristics are described in the Shunt Resistor section of the Electrical
Characteristics table
7.5 Electrical Characteristics
at TA = 25 °C, VS = 5 V, ISENSE = IS+ = 0 A, VCM = 12 V, and VREF1 = VREF2 = VS / 2 (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
INPUT
VCM
Common-mode input range
VIN+ = –4 V to 80 V, ISENSE = 0 A,
TA = – 40°C to +125°C
-4
80
V
CMR
Common-mode rejection
VIN+ = –4 V to 80 V, ISENSE = 0 A,
TA = –40°C to +125°C
±125
±500
µA/V
f = 50 kHz
±11
mA/V
IOS
Offset current, input-referred
ISENSE = 0 A
±2.5
±12.5
mA
dIOS/dT
Offset current drift
ISENSE = 0 A, TA = –40°C to +125°C
25
125
µA/°C
PSRR
Power-supply rejection ratio
VS = 2.7 V to 5.5 V, ISENSE = 0 A
±0.5
±5
mA/V
IB
Input bias current
IB+, IB–, ISENSE = 0 A
90
µA
Reference Input Range
0
VS
V
SHUNT RESISTOR
RSHUNT
Shunt resistance (SH+ to SH–)
Equivalent resistance when used with
onboard amplifier
1.998
2
2.002
m
Used as stand-alone resistor(1)
1.9
2
2.1
Package resistance
IS+ to IS–
4.5
m
Package Inductance
IS+ to IS–
3
nH
Resistor temperature coefficient
TA = –40°C to 125°C
15
ppm/°C
TA = –40°C to 0°C
50
TA = 0°C to 125°C
10
ppm/°C
ISENSE
Maximum continuous current(2)
TA = –40°C to 85°C
±15
A
Shunt short time overload
ISENSE = 30 A for 5 seconds
±0.05%
Shunt thermal shock
–65°C to 150°C, 500 cycles
±0.1%
Shunt resistance to solder heat
260°C solder, 10 seconds
±0.1%
Shunt high temperature exposure
1000 hours, TA = 150°C
±0.15%
Shunt cold temperature storage
24 hours, TA = –65°C
±0.025%
OUTPUT
G
Gain
INA253A1
100
mV/A
INA253A2
200
INA253A3
400
mV/A
System Gain error(3)
GND + 50 mV
≤ VOUT ≤ VS – 200
mV, TA = 25°C
±0.25%
±0.75%
TA = –40°C to +125°C
±0.5
±45
ppm/°C
Nonlinearity error
GND + 10 mV
≤ VOUT ≤ VS – 200 mV
±0.01%
Reference divider accuracy
VOUT = |(VREF1 – VREF2)| / 2 at ISENSE = 0
A, TA = –40°C to +125°C
0.02%
0.1%
RVRR
Reference voltage rejection ratio (input-
referred)
INA253A2
2.5
mA/V
INA253A1, INA253A3
1
Maximum capacitive load
No sustained oscillation
1
nF
VOLTAGE OUTPUT
Swing to VS power-supply rail
RL = 10 kΩ to GND,
TA = –40°C to +125°C
VS – 0.05
VS – 0.2
V
Swing to GND
RL = 10 kΩ to GND, ISENSE = 0 A,
VREF1=VREF2=0V, TA = –40°C to +125°C
VGND + 1
VGND + 10
mV
 6 page
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Electrical Characteristics (continued)
at TA = 25 °C, VS = 5 V, ISENSE = IS+ = 0 A, VCM = 12 V, and VREF1 = VREF2 = VS / 2 (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
(4)
See Bandwidth section for more details
FREQUENCY RESPONSE
BW
Bandwidth(4)
All gains, –3-dB bandwidth
350
kHz
All gains, 2% THD+N(4)
100
kHz
Settling time - output settles to 0.5% of
final value
INA253A1, INA253A2, INA253A3
10
µs
SR
Slew rate
2
V/µs
NOISE (Input Referred)
Voltage noise density
40
nV/
√Hz
POWER SUPPLY
VS
Operating voltage range
TA = –40°C to +125°C
2.7
5.5
V
IQ
Quiescent current
ISENSE = 0 A
1.8
2.4
mA
IQ vs temperature, TA = –40°C to
+125°C
2.6
TEMPERATURE RANGE
Specified range
–40
125
°C
Operating range
–55
150
°C
 7 page
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+
±
REF2
REF1
VS
GND
OUT
PWM
Rejection
50k
50k
IS+
IS-
IN+
IN-
SH+
SH-
2mO
0.1%
7
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8 Detailed Description
8.1 Overview
The INA253 features a 2-mΩ, precision, current-sensing resistor and a 80-V common-mode, zero-drift topology,
precision, excellent common-mode rejection ratio (CMRR). It features enhanced pulse width modulation (PWM)
rejection current-sensing amplifier integrated into a single package. High precision measurements are enabled
through the matching of the shunt resistor value and the current-sensing amplifier gain providing a highly-
accurate, system-calibrated solution. Enhanced PWM rejection reduces the effect of common-mode transients on
the output signal that are associated with PWM signals. Multiple gain versions are available to allow for the
optimization of the desired full-scale output voltage based on the target current range expected in the application.
Multiple gain versions are available to allow for the optimization of the desired full-scale output voltage based on
the target current range expected in the application.
8.2 Functional Block Diagram
8.3 Feature Description
8.3.1 Integrated Shunt Resistor
The INA253 features a precise, low-drift, current-sensing resistor to allow for precision measurements over the
entire specified temperature range of –40°C to 125°C. The integrated current-sensing resistor ensures
measurement stability over temperature as well as improving layout and board constraint difficulties common in
high precision measurements.
The onboard current-sensing resistor is designed as a 4-wire (or Kelvin) connected resistor that enables accurate
measurements through a force-sense connection. Connecting the amplifier inputs pins (VIN– and VIN+) to the
sense pins of the shunt resistor (SH– and SH+) eliminates many of the parasitic impedances commonly found in
typical very-low sensing-resistor level measurements. Although the sense connection of the current-sensing
resistor can be accessed via the SH+ and SH– pins, this resistor is not intended to be used as a stand-alone
component. The INA253 is system-calibrated to ensure that the current-sensing resistor and current-sensing
amplifier are both precisely matched to one another. Use of the shunt resistor without the onboard amplifier
results in a current-sensing resistor tolerance of approximately 5%. To achieve the optimized system gain
specification, the onboard sensing resistor must be used with the internal current-sensing amplifier.
The INA253 has approximately 4.5 mΩ of package resistance. 2 mΩ of this total package resistance is a
precisely-controlled resistance from the Kelvin-connected current-sensing resistor used by the amplifier. The
power dissipation requirements of the system and package are based on the total 4.5-mΩ package resistance
between the IN+ and IN– pins. The heat dissipated across the package when current flows through the device
ultimately determines the maximum current that can be safely handled by the package. The current consumption
of the silicon is relatively low, leaving the total package resistance carrying the high load current as the primary
contributor to the total power dissipation of the package. The maximum safe-operating current level is set to
ensure that the heat dissipated across the package is limited so that no damage to the resistor or the package
itself occurs or that the internal junction temperature of the silicon does not exceed a 150°C limit.
 8 page
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0
20
40
60
80
100
0.1
1
10
100
Time (s)
C027
5
7.5
10
12.5
15
17.5
20
±50
±25
0
25
50
75
100
125
150
Temperature (
ƒC)
C026
8
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Feature Description (continued)
External factors (such as ambient temperature, external air flow, and PCB layout) can contribute to how
effectively the heat developed as a result of the current flowing through the total package resistance can be
removed from within the device. Under the conditions of no air flow, a maximum ambient temperature of 85°C,
and 1-oz. copper input power planes, the INA253 can accommodate continuous current levels up to 15 A. As
shown in Figure 1, the current handling capability is derated at temperatures above the 85°C level with safe
operation up to 10 A at a 125°C ambient temperature. With air flow and larger 2-oz. copper input power planes,
the INA253 can safely accommodate continuous current levels up to 15 A over the entire –40°C to 125°C
temperature range.
Figure 1. Maximum Continuous Current vs Temperature
8.3.2 Short-Circuit Duration
The INA253 features a physical shunt resistance that is able to withstand current levels higher than the
continuous handling limit of 15 A without sustaining damage to the current-sensing resistor or the current-sensing
amplifier if the excursions are brief. Figure 2 shows the short-circuit duration curve for the INA253.
Figure 2. Short-Circuit Duration
8.3.3 Temperature Stability
System calibration is common for many industrial applications to eliminate initial component and system-level
errors that can be present. A system-level calibration can reduce the initial accuracy requirement for many of the
individual components because the errors associated with these components are effectively eliminated through
the calibration procedure.
Performing this calibration enables precision measurements at the temperature in
which the system is calibrated. As the system temperature changes as a result of external ambient changes or
due to self heating, measurement errors are reintroduced. Without accurate temperature compensation used in
 9 page
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1.99
1.995
2
2.005
±50
±25
0
25
50
75
100
125
150
Temperature (
ƒC)
C030
9
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Feature Description (continued)
addition to the initial adjustment, the calibration procedure is not effective. The user must account for the
temperature-induced changes. One of the primary benefits of the low temperature coefficient of the INA250
(including both the integrated current-sensing resistor and current-sensing amplifier) is ensuring that the device
measurement remains accurate, even when the temperature changes throughout the specified temperature
range of the device.
For the integrated current-sensing resistor, the drift performance is shown in Figure 3. Although several
temperature ranges are specified in the table, applications operating in ranges other than those described can
use Figure 3 to determine how much variance in the shunt resistor value can be expected. As with any resistive
element, the tolerance of the component varies when exposed to different temperature conditions.
For the
current-sensing resistor integrated in the INA250, the resistor does vary slightly more when operated in
temperatures ranging from –40°C to 0°C than when operated from 0°C to 125°C. Even in the –40°C to 0°C
temperature range, the drift is still low at 25 ppm/°C.
Figure 3. Sensing Resistor vs Temperature
An additional aspect to consider is that when current flows through the current-sensing resistor, power is
dissipated across this component. This dissipated power results in an increase in the internal temperature of the
package, including the integrated sensing resistor. This resistor self-heating effect results in an increase of the
resistor temperature helping to move the component out of the colder, wider drift temperature region.
8.3.4 Enhanced PWM Rejection Operation
The enhanced PWM rejection feature of the INA253 provides increased attenuation of large common-mode
ΔV/Δt transients. Large ΔV/Δt common-mode transients associated with PWM signals are employed in
applications such as motor or solenoid drive and switching power supplies. Traditionally, large ΔV/Δt common-
mode transitions are handled strictly by increasing the amplifier signal bandwidth, which can increase chip size,
complexity and ultimately cost. The INA253 is designed with high common-mode rejection techniques to reduce
large ΔV/Δt transients before the system is disturbed as a result of these large signals. The high AC CMRR, in
conjunction with signal bandwidth, allows the INA253 to provide minimal output transients and ringing compared
with standard circuit approaches.
8.3.5 Input Signal Bandwidth
The INA253 input signal, which represents the current being measured, is accurately measured with minimal
disturbance from large ΔV/Δt common-mode transients as previously described. For PWM signals typically
associated with motors, solenoids, and other switching applications, the current being monitored varies at a
significantly slower rate than the faster PWM frequency.
The INA253 bandwidth is defined by the –3-dB bandwidth of the current-sense amplifier inside the device, see
Specifications. The device bandwidth provides fast throughput and fast response required for the rapid detection
and processing of overcurrent events. Without the higher bandwidth, protection circuitry may not have adequate
response time and damage may occur to the monitored application or circuit.
 10 page
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Frequency (Hz)
0.01%
0.1%
1%
10%
1
10
100
1k
10k
100k
1M
D006
90% FS Input
10
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Feature Description (continued)
shows the performance profile of the device over frequency. Harmonic distortion increases at the upper end of
the amplifier bandwidth with no adverse change in detection of overcurrent events. However, increased distortion
at the highest frequencies must be considered when the measured current bandwidth begins to approach the
INA253 bandwidth.
For applications requiring distortion sensitive signals, Figure 4 provides information to show that there is an
optimal frequency performance range for the amplifier. The full amplifier bandwidth is always available for fast
overcurrent events at the same time that the lower frequency signals are amplified at a low distortion level. The
output signal accuracy is reduced for frequencies closer to the maximum bandwidth. Individual requirements
determine the acceptable limits of distortion for high-frequency, current-sensing applications. Testing and
evaluation in the end application or circuit is required to determine the acceptance criteria and to validate the
performance levels meet the system specifications.
Figure 4. Performance Over Frequency
8.4 Device Functional Modes
8.4.1 Adjusting the Output Midpoint With the Reference Pins
shows a test circuit for reference-divider accuracy. The INA253 output is configurable to allow for unidirectional
or bidirectional operation.
NOTE
Do not connect the REF1 pin or the REF2 pin to any voltage source lower than GND or
higher than VS.
The output voltage is set by applying a voltage or voltages to the reference voltage inputs, REF1 and REF2. The
reference inputs are connected to an internal gain network. There is no operational difference between the two
reference pins.




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