전자부품 데이터시트 검색엔진
Selected language     Korean  ▼
부품명
         상세내용
Preview PDF Download HTML-1page HTML-10pages

IRFZ34VPBF 데이터시트(Datasheet) 3 Page - International Rectifier

부품명 IRFZ34VPBF
상세내용  HEXFET Power MOSFET
PDF  8 Pages
Scroll/Zoom Zoom In 100% Zoom Out
제조사  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo 

   
 1 page
background image
IRFZ34VPbF
HEXFET® Power MOSFET
12/04/03
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
30
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
21
A
IDM
Pulsed Drain Current

120
PD @TC = 25°C
Power Dissipation
70
W
Linear Derating Factor
0.46
W/°C
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy
‚
81
mJ
IAR
Avalanche Current

30
A
EAR
Repetitive Avalanche Energy

7.0
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ
4.5
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew
10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
2.15
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
°C/W
RθJA
Junction-to-Ambient
–––
62
Thermal Resistance
www.irf.com
1
VDSS = 60V
RDS(on) = 28mΩ
ID = 30A
S
D
G
TO-220AB
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Optimized for SMPS Applications
l Lead-Free
Description
PD - 94868
 2 page
background image
IRFZ34VPbF
2
www.irf.com
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.6
V
TJ = 25°C, IS = 30A, VGS = 0V
„
trr
Reverse Recovery Time
–––
70
110
ns
TJ = 25°C, IF = 30A
Qrr
Reverse Recovery Charge
–––
99
150
nC
di/dt = 100A/µs
„
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
30
120
A
‚ Starting TJ = 25°C, L = 180µH
RG = 25Ω, IAS = 30A. (See Figure 12)
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
ƒ ISD ≤ 30A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
60
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.062 –––
V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
26
m
VGS = 10V, ID = 18A
„
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
15
–––
–––
S
VDS = 25V, ID = 18A
„
–––
–––
25
µA
VDS = 60V, VGS = 0V
–––
–––
250
VDS = 48V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 20V
Gate-to-Source Reverse Leakage
–––
––– -100
nA
VGS = -20V
Qg
Total Gate Charge
–––
–––
49
ID = 30A
Qgs
Gate-to-Source Charge
–––
–––
12
nC
VDS = 48V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
18
VGS = 10V, See Fig. 6 and 13
td(on)
Turn-On Delay Time
–––
10
–––
VDD = 30V
tr
Rise Time
–––
65
–––
ID = 30A
td(off)
Turn-Off Delay Time
–––
31
–––
RG = 12Ω
tf
Fall Time
–––
40
–––
VGS = 10V, See Fig. 10
„
Between lead,
–––
–––
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
––– 1120 –––
VGS = 0V
Coss
Output Capacitance
–––
250
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
59
–––
pF
ƒ = 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LD
Internal Drain Inductance
LS
Internal Source Inductance
–––
–––
S
D
G
IGSS
ns
4.5
7.5
IDSS
Drain-to-Source Leakage Current
 3 page
background image
IRFZ34VPbF
www.irf.com
3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
1000
0.1
1
10
100
20µs PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V
, Drain-to-Source Voltage (V)
DS
4.5V
1
10
100
1000
0.1
1
10
100
20µs PULSE WIDTH
T = 175 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V
, Drain-to-Source Voltage (V)
DS
4.5V
1
10
100
1000
4
5
6
7
8
9
10
11
V
= 50V
20µs PULSE WIDTH
DS
V
, Gate-to-Source Voltage (V)
GS
T = 25 C
J
°
T = 175 C
J
°
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
T , Junction Temperature ( C)
J
°
V
=
I =
GS
D
10V
30A
 4 page
background image
IRFZ34VPbF
4
www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
0
400
800
1200
1600
2000
V
, Drain-to-Source Voltage (V)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C
SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
Ciss
Coss
Crss
0
10
20
30
40
50
0
4
8
12
16
20
Q , Total Gate Charge (nC)
G
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
30A
V
= 12V
DS
V
= 30V
DS
V
= 48V
DS
0.1
1
10
100
1000
0.0
0.4
0.8
1.2
1.6
2.0
V
,Source-to-Drain Voltage (V)
SD
V
= 0 V
GS
T = 25 C
J
°
T = 175 C
J
°
1
10
100
1000
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 175 C
= 25 C
°
°
J
C
V
, Drain-to-Source Voltage (V)
DS
10us
100us
1ms
10ms
 5 page
background image
IRFZ34VPbF
www.irf.com
5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
1
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25
50
75
100
125
150
175
0
5
10
15
20
25
30
T , Case Temperature ( C)
°
C
VDS
90%
10%
VGS
td(on)
tr
td(off) tf
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-VDD
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
 6 page
background image
IRFZ34VPbF
6
www.irf.com
25
50
75
100
125
150
175
0
40
80
120
160
Starting T , Junction Temperature ( C)
J
°
ID
TOP
BOTTOM
12A
21A
30A
QG
QGS
QGD
VG
Charge
D.U.T.
VDS
ID
IG
3mA
VGS
.3
µF
50K
.2
µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V(BR)DSS
IAS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
RG
IAS
0.01
tp
D.U.T
L
VDS
+
- VDD
DRIVER
A
15V
20V
 7 page
background image
IRFZ34VPbF
www.irf.com
7
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤ 5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
+
+
-
-
-
ƒ
„
‚
RG
VDD
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
*
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer

* Reverse Polarity of D.U.T for P-Channel
VGS
[ ]
[ ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
[
] ***
Fig 14. For N-channel HEXFET® power MOSFETs
 8 page
background image
IRFZ34VPbF
8
www.irf.com
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
- B -
1.32 (.052)
1.22 (.048)
3X 0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
4.69 (.185)
4.20 (.165)
3X
0.93 (.037)
0.69 (.027)
4.06 (.160)
3.55 (.140)
1.15 (.045)
MIN
6.47 (.255)
6.10 (.240)
3.78 (.149)
3.54 (.139)
- A -
10.54 (.415)
10.29 (.405)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
3X
1.40 (.055)
1.15 (.045)
2.54 (.100)
2X
0.36 (.014)
M B A M
4
1
2 3
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
HEXFET
1- GATE
2- DRAIN
3- SOURCE
4- DRAIN
LEAD ASSIGNMENTS
IGBTs, CoPACK
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
EXAMPL E :
IN T HE ASSE MB LY L INE "C"
T HIS IS AN IR F1010
LOT CODE 1789
AS S E MB L E D ON WW 19, 1997
PART NU MB E R
ASSE MBL Y
LOT CODE
DAT E CODE
YE AR 7 = 1997
LINE C
WEEK 19
LOGO
RE CT IFIE R
INT E R NAT IONAL
Note: "P" in assembly line
position indicates "Lead-Free"
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/03




Html 페이지

1  2  3  4  5  6  7  8 


데이터시트



관련 부품명

부품명상세내용Html View제조사
IRFZ24NPBFHEXFET Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRF7902PBFHEXFET Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRLR120HEXFET Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRFP150VHEXFET Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRLZ4SHEXFET POWER MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRF3704ZCSPBFHEXFET Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRFP150VPBFHEXFET Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRL1004SPBFHEXFET Power MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRF730ASPBFHEXFET Power MOSFET SMPS MOSFET 1 2 3 4 5 MoreInternational Rectifier
IRF7832ZPBFHEXFET Power MOSFET 1 2 3 4 5 MoreInternational Rectifier

링크 URL


Privacy Policy
ALLDATASHEET.CO.KR
ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ]  

Alldatasheet는?   |   광고문의    |   운영자에게 연락하기   |   개인정보취급방침   |   즐겨찾기   |   링크교환   |   제조사별 검색
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn