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IRF7301PBF 데이터시트(Datasheet) 4 Page - International Rectifier

부품명 IRF7301PBF
상세내용  HEXFET Power MOSFET
PDF  9 Pages
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제조사  IRF [International Rectifier]
홈페이지  http://www.irf.com
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 1 page
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HEXFET® Power MOSFET
PD - 95176
10/6/04
l
Generation V Technology
l
Ultra Low On-Resistance
l
Dual N-Channel Mosfet
l
Surface Mount
l
Available in Tape & Reel
l
Dynamic dv/dt Rating
l
Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple devices can be used in
an application with dramatically reduced board space. The package is designed
for vapor phase, infra red, or wave soldering techniques. Power dissipation of
greater than 0.8W is possible in a typical PCB mount application.
IRF7301PbF
SO-8
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
Parameter
Max.
Units
ID @ TA = 25°C
10 Sec. Pulsed Drain Current, VGS @ 4.5V
5.7
ID @ TA = 25°C
Continuous Drain Current, VGS @ 4.5V
5.2
ID @ TA = 70°C
Continuous Drain Current, VGS @ 4.5V
4.1
IDM
Pulsed Drain Current 
21
PD @TA = 25°C
Power Dissipation
2.0
W
Linear Derating Factor
0.016
W/°C
VGS
Gate-to-Source Voltage
± 12
V
dv/dt
Peak Diode Recovery dv/dt ‚
5.0
V/ns
TJ,TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Absolute Maximum Ratings
A
VDSS = 20V
RDS(on) = 0.050Ω
Thermal Resistance Ratings
Parameter
Typ.
Max.
Units
RθJA
Maximum Junction-to-Ambient„
–––
62.5
°C/W
l
Lead-Free
 2 page
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IRF7301PbF
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
20
––– –––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.044 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.050
VGS = 4.5V, ID = 2.6A ƒ
––– ––– 0.070
VGS = 2.7V, ID = 2.2A ƒ
VGS(th)
Gate Threshold Voltage
0.70 ––– –––
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
8.3 ––– –––
S
VDS = 15V, ID = 2.6A
––– –––
1.0
VDS = 16V, VGS = 0V
––– –––
25
VDS = 16V, VGS = 0V, TJ = 125 °C
Gate-to-Source Forward Leakage
––– ––– 100
VGS = 12V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = - 12V
Qg
Total Gate Charge
––– –––
20
ID = 2.6A
Qgs
Gate-to-Source Charge
––– –––
2.2
nC
VDS = 16V
Qgd
Gate-to-Drain ("Miller") Charge
––– –––
8.0
VGS = 4.5V, See Fig. 6 and 12 ƒ
td(on)
Turn-On Delay Time
––– 9.0 –––
VDD = 10V
tr
Rise Time
–––
42
–––
ID = 2.6A
td(off)
Turn-Off Delay Time
–––
32
–––
RG = 6.0Ω
tf
Fall Time
–––
51
–––
RD = 3.8Ω, See Fig. 10 ƒ
Between lead tip
and center of die contact
Ciss
Input Capacitance
––– 660 –––
VGS = 0V
Coss
Output Capacitance
––– 280 –––
pF
VDS = 15V
Crss
Reverse Transfer Capacitance
––– 140 –––
ƒ = 1.0MHz, See Fig. 5
Notes:
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode) 
p-n junction diode.
VSD
Diode Forward Voltage
––– –––
1.0
V
TJ = 25°C, IS = 1.8A, VGS = 0V ƒ
trr
Reverse Recovery Time
–––
29
44
ns
TJ = 25°C, IF = 2.6A
Qrr
Reverse RecoveryCharge
–––
22
33
nC
di/dt = 100A/µs ƒ
ton
Forward Turn-On Time
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ ISD ≤ 2.6A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
Source-Drain Ratings and Characteristics
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
––– –––
21
––– –––
2.5
A
S
D
G
IGSS
IDSS
Drain-to-Source Leakage Current
LS
Internal Source Inductance
––– 6.0
–––
LD
Internal Drain Inductance
––– 4.0
–––
nH
ns
nA
µA
RDS(ON)
Static Drain-to-Source On-Resistance
S
D
G
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
„ Surface mounted on FR-4 board, t ≤ 10sec.
 3 page
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IRF7301PbF
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1
10
100
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
T = 25°C
T = 150°C
J
J
GS
V
, Gate-to-Source Voltage (V)
A
V
= 15V
20µs PULSE WIDTH
DS
0.0
0.5
1.0
1.5
2.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
J
T , Junction Temperature (°C)
A
V
= 4.5V
GS
I = 4.3A
D
1
10
100
1000
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
20µs PULSE WIDTH
T = 25°C
A
VGS
TOP
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
1.5V
J
1
10
100
1000
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
A
VGS
TOP
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
1.5V
20µs PULSE WIDTH
T = 150°C
J
 4 page
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IRF7301PbF
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
300
600
900
1200
1
10
100
DS
V
, Drain-to-Source Voltage (V)
A
V
= 0V,
f = 1MHz
C
= C
+ C
, C
SHORTED
C
= C
C
= C
+ C
GS
iss
gs
gd
ds
rss
gd
oss
ds
gd
Ciss
Coss
Crss
0
2
4
6
8
10
0
5
10
15
20
25
Q , Total Gate Charge (nC)
G
A
FOR TEST CIRCUIT
SEE FIGURE 12
I = 2.6A
V
= 16V
D
DS
0.1
1
10
100
0.0
0.5
1.0
1.5
2.0
2.5
T = 25°C
T = 150°C
J
J
V
= 0V
GS
V
, Source-to-Drain Voltage (V)
SD
A
1
10
100
0.1
1
10
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
A
V
, Drain-to-Source Voltage (V)
DS
100us
1ms
10ms
 5 page
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IRF7301PbF
Fig 10a. Switching Time Test Circuit
+
-
VDS
90%
10%
VGS
td(on)
tr
td(off) tf
VDS
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
Fig 10b. Switching Time Waveforms
RD
VGS
VDD
RG
D.U.T.
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
1
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25
50
75
100
125
150
0.0
1.0
2.0
3.0
4.0
5.0
6.0
T , Case Temperature ( C)
°
C
 6 page
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IRF7301PbF
Fig 12a. Basic Gate Charge Waveform
Fig 12b. Gate Charge Test Circuit
D.U.T.
VDS
ID
IG
3mA
VGS
.3
µF
50K
.2
µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
QG
QGS
QGD
VG
Charge
4.5V
 7 page
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IRF7301PbF
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤ 5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
+
+
-
-
-
ƒ
„
‚
RG
VDD
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer

* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
*
VGS*
**
Peak Diode Recovery dv/dt Test Circuit
[ ]
[ ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
[
] ***
Fig 13. For N-Channel HEXFETS
 8 page
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IRF7301PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
.013
.050 BASIC
.0532
.0040
.2284
.0099
.016
.1968
.1574
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
1.27 BASIC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN
MAX
MILLIMETERS
INCHES
MIN
MAX
DIM
e
c
.0075
.0098
0.19
0.25
.025 BASIC
0.635 BASIC
87
5
65
D
B
E
A
e
6X
H
0.25 [.010]
A
6
7
K x 45°
8X L
8X c
y
0.25 [.010]
CA B
e1
A
A1
8X b
C
0.10 [.004]
4
3
12
FOOTPRINT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
4. OUTLINE CONFORMS TO JEDECOUTLINE MS-012AA.
NOTES:
1. DIMENSIONING& TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
DATE CODE (YWW)
XXXX
INTERNATIONAL
RECTIFIER
LOGO
F7101
Y = LAST DIGIT OF THE YEAR
PART NUMBER
LOT CODE
WW = WEEK
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
P = DES IGNATES LEAD-FREE
PRODUCT (OPTIONAL)
A = AS SEMBLY S ITE CODE
 9 page
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IRF7301PbF
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/04




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