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IRF1104PBF 데이터시트(Datasheet) 3 Page - International Rectifier

부품명 IRF1104PBF
상세내용  HEXFET POWER MOSFET ( VDSS = 40V , RDS(on) = 0.009Ω , ID = 100A )
PDF  9 Pages
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제조사  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo 

   
 1 page
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IRF1104PbF
HEXFET® Power MOSFET
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
S
D
G
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
100
…
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
71
A
IDM
Pulsed Drain Current

400
PD @TC = 25°C
Power Dissipation
170
W
Linear Derating Factor
1.11
W/°C
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy
‚
350
mJ
IAR
Avalanche Current

60
A
EAR
Repetitive Avalanche Energy

17
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ
5.0
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew
10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.90
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
°C/W
RθJA
Junction-to-Ambient
–––
62
Thermal Resistance
VDSS = 40V
RDS(on) = 0.009Ω
ID = 100A
…
TO-220AB
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
Description
02/02/04
www.irf.com
1
PD - 94967
 2 page
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IRF1104PbF
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
40
––– –––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.038 –––
V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
––– 0.009
VGS = 10V, ID = 60A
„
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
37
–––
–––
S
VDS = 25V, ID = 60A
–––
–––
25
µA
VDS = 40V, VGS = 0V
–––
––– 250
VDS = 32V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
––– 100
VGS = 20V
Gate-to-Source Reverse Leakage
–––
––– -100
nA
VGS = -20V
Qg
Total Gate Charge
–––
–––
93
ID = 60A
Qgs
Gate-to-Source Charge
–––
–––
29
nC
VDS = 32V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
30
VGS = 10V, See Fig. 6 and 13
„
td(on)
Turn-On Delay Time
–––
15
–––
VDD = 20V
tr
Rise Time
–––
114
–––
ID = 60A
td(off)
Turn-Off Delay Time
–––
28
–––
RG = 3.6Ω
tf
Fall Time
–––
19
–––
RD = 0.33Ω, See Fig. 10
„
Between lead,
–––
–––
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
––– 2900 –––
VGS = 0V
Coss
Output Capacitance
––– 1100 –––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
250 –––
ƒ = 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LD
Internal Drain Inductance
LS
Internal Source Inductance
–––
–––
S
D
G
IGSS
ns
4.5
7.5
IDSS
Drain-to-Source Leakage Current
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ƒ ISD ≤ 60A, di/dt ≤ 304A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Notes:
‚ Starting TJ = 25°C, L = 194µH
RG = 25Ω, IAS = 60A. (See Figure 12)
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
––– –––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

––– –––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C, IS = 60A, VGS = 0V
„
trr
Reverse Recovery Time
–––
74
110
ns
TJ = 25°C, IF = 60A
Qrr
Reverse RecoveryCharge
–––
188
280
nC
di/dt = 100A/µs
„
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
100
…
400
A
… Caculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
 3 page
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IRF1104PbF
www.irf.com
3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
1000
0.1
1
10
100
20µs PULSE WIDTH
T = 175 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V
, Drain-to-Source Voltage (V)
DS
4.5V
1
10
100
1000
0.1
1
10
100
20µs PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V
, Drain-to-Source Voltage (V)
DS
4.5V
0.1
1
10
100
1000
4.0
5.0
6.0
7.0
8.0
9.0
10.0
V
= 50V
20µs PULSE WIDTH
DS
V
, Gate-to-Source Voltage (V)
GS
T = 175 C
J
°
T = 25 C
J
°
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
J
°
V
=
I =
GS
D
10V
100A
 4 page
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IRF1104PbF
4
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
0
1000
2000
3000
4000
5000
V
, Drain-to-Source Voltage (V)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C
SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
Ciss
Coss
Crss
0.1
1
10
100
1000
0.2
0.8
1.4
2.0
2.6
V
,Source-to-Drain Voltage (V)
SD
V
= 0 V
GS
T = 25 C
J
°
T = 175 C
J
°
1
10
100
1000
10000
1
10
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 175 C
= 25 C
°
°
J
C
V
, Drain-to-Source Voltage (V)
DS
10us
100us
1ms
10ms
0
25
50
75
100
0
5
10
15
20
Q , Total Gate Charge (nC)
G
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
60A
V
= 20V
DS
V
= 32V
DS
 5 page
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IRF1104PbF
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5
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on)
tr
td(off) tf
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
1
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25
50
75
100
125
150
175
0
20
40
60
80
100
T , Case Temperature ( C)
°
C
LIMITED BY PACKAGE
 6 page
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IRF1104PbF
6
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QG
QGS
QGD
VG
Charge
D.U.T.
VDS
ID
IG
3mA
VGS
.3
µF
50K
.2
µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V(BR)DSS
IAS
RG
IAS
0.01
tp
D.U.T
L
VDS
+
- VDD
DRIVER
A
15V
20V
25
50
75
100
125
150
175
0
200
400
600
800
Starting T , Junction Temperature ( C)
J
°
ID
TOP
BOTTOM
24A
42A
60A
 7 page
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IRF1104PbF
www.irf.com
7
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤ 5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFETS
* VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
ƒ
„
‚
RG
VDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer

*
 8 page
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IRF1104PbF
8
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LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
- B -
1.32 (.052)
1.22 (.048)
3X 0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
4.69 (.185)
4.20 (.165)
3X
0.93 (.037)
0.69 (.027)
4.06 (.160)
3.55 (.140)
1.15 (.045)
MIN
6.47 (.255)
6.10 (.240)
3.78 (.149)
3.54 (.139)
- A -
10.54 (.415)
10.29 (.405)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
3X
1.40 (.055)
1.15 (.045)
2.54 (.100)
2X
0.36 (.014)
M B A M
4
1
2 3
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
HEXFET
1- GATE
2- DRAIN
3- SOURCE
4- DRAIN
LEAD ASSIGNMENTS
IGBTs, CoPACK
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
EXAMPL E :
IN T HE ASSEMB L Y LINE "C"
T HIS IS AN IRF 1010
LOT CODE 1789
AS S E MB L E D ON WW 19, 1997
PART NU MB E R
AS S E MB L Y
LOT CODE
DAT E CODE
YE AR 7 = 1997
LINE C
WEEK 19
LOGO
RE CT IF IE R
INT E RNAT IONAL
Note: "P" in assembly line
position indicates "Lead-Free"
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.02/04
 9 page
background image
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/




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