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전자부품 데이터시트 검색엔진 |
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2N2222A 데이터시트(PDF) 1 Page - Diotec Semiconductor |
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2N2222A 데이터시트(HTML) 1 Page - Diotec Semiconductor |
1 / 2 page ![]() 2N2222A 2N2222A General Purpose NPN Transistors Universal-NPN-Transistoren IC = 600 mA hFE ~ 200 Tjmax = 150°C VCEO = 40 V Ptot = 625 mW Version 2017-12-06 TO-92 (10D3) Dimensions - Maße [mm] Typical Applications Signal processing, Switching, Amplification Commercial grade 1) Typische Anwendungen Signalverarbeitung, Schalten, Verstärken Standardausführung 1) Features General Purpose Compliant to RoHS, REACH, Conflict Minerals 1) Besonderheiten Universell anwendbar Konform zu RoHS, REACH, Konfliktmineralien 1) Mechanical Data 1) Mechanische Daten 1) Taped in ammo pack (Raster 2.54) 4000 Gegurtet in Ammo-Pack (Raster 2.54) Weight approx. 0.18 g Gewicht ca. Case material UL 94V-0 Gehäusematerial Solder & assembly conditions 260°C/10s Löt- und Einbaubedingungen MSL N/A Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren 2N2907A Maximum ratings 2) Grenzwerte 2) 2N2222A Collector-Emitter-voltage - Kollektor-Emitter-Spannung B open VCEO 75 V Collector-Base-voltage - Kollektor-Basis-Spannung E open VCBO 40 V Emitter-Base-voltage - Emitter-Basis-Spannung C open VEBO 6 V Power dissipation – Verlustleistung Ptot 625 mW 3) Collector current – Kollektorstrom DC IC 600 mA Base current – Basisstrom I B 800 mA Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -55...+150°C -65…+150°C Characteristics Kennwerte Tj = 25°C Min. Typ. Max. Collector-Base cutoff current – Kollektorreststrom VCB = 60 V ICBO – – 10 nA Collector saturation voltage – Kollektor-Sättigungsspannung IC = 150 mA, IB = 15 mA 1) IC = 500 mA, IB = 50 mA 1) VCEsat VCEsat – – – – 0.3 V 1 V 1 Please note the detailed information on our website or at the beginning of the data book Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches 2 TA = 25°C, unless otherwise specified – TA = 25°C, wenn nicht anders angegeben 3 Valid if leads are kept at ambient temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden © Diotec Semiconductor AG http://www.diotec.com/ 1 Pb RoHS 2 x 2.54 E B C |
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