2N2222A datasheet(2/2 Pages) DIOTEC | General Purpose NPN Transistors

부품명	2N2222A

부품 상세설명	General Purpose NPN Transistors

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2N2222A

Characteristics

Kennwerte

Tj = 25°C

Min.

Typ.

Max.

DC current gain – Kollektor-Basis-Stromverhältnis

IC = 0.1 mA, VCE = 10 V

IC = 1 mA, VCE = 10 V

IC = 10 mA, VCE = 10 V

IC = 150 mA, VCE = 10 V 1)

IC = 500 mA, VCE = 10 V 1)

hFE

35

50

75

100

40

–

300

–

Gain-Bandwidth Product – Transitfrequenz

IC = 20 mA, VCE = 20 V, f = 100 MHz

fT

250 MHz

–

Collector-Base Capacitance – Kollektor-Basis-Kapazität

VCB = 10 V, IE =ie = 0, f = 1 MHz

CCBO

–

8 pF

Emitter-Base Capacitance – Emitter-Basis-Kapazität

VEB = 0.5 V, IC =ic = 0, f = 1 MHz

CEBO

–

30 pF

Thermal resistance junction to ambient

Wärmewiderstand Sperrschicht – Umgebung

RthA

< 200 K/W 2)

Disclaimer: See data book page 2 or website

Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet

1

Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

2

Valid if leads are kept at ambient temperature at a distance of 2 mm from case

Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden

2

http://www.diotec.com/

[%]

P

tot

120

100

80

60

40

20

0

[°C]

T

A

150

100

50

0

Power dissipation versus ambient temperature )

Verlustleistung in Abh. von d. Umgebungstemp. )

1

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