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TC51WHM616AXBN70 데이터시트(HTML) 4 Page - Toshiba Semiconductor

부품명 TC51WHM616AXBN70
상세내용  TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
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제조사  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
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TC51WHM616AXBN70 데이터시트(HTML) 4 Page - Toshiba Semiconductor

 
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TC51WHM616AXBN65,70
2002-08-22
4/11
AC CHARACTERISTICS AND OPERATING CONDITIONS
(Ta
==== −−−−25°C to 85°C, VDD ==== 2.6 to 3.3 V) (See Note 5 to 11)
TC51WHM616AXBN
65
70
SYMBOL
PARAMETER
MIN
MAX
MIN
MAX
UNIT
tRC
Read Cycle Time
65
10000
70
10000
ns
tACC
Address Access Time
65
70
ns
tCO
Chip Enable ( CE1 ) Access Time
65
70
ns
tOE
Output Enable Access Time
25
25
ns
tBA
Data Byte Control Access Time
25
25
ns
tCOE
Chip Enable Low to Output Active
10
10
ns
tOEE
Output Enable Low to Output Active
0
0
ns
tBE
Data Byte Control Low to Output Active
0
0
ns
tOD
Chip Enable High to Output High-Z
20
20
ns
tODO
Output Enable High to Output High-Z
20
20
ns
tBD
Data Byte Control High to Output High-Z
20
20
ns
tOH
Output Data Hold Time
10
10
ns
tPM
Page Mode Time
65
10000
70
10000
ns
tPC
Page Mode Cycle Time
30
30
ns
tAA
Page Mode Address Access Time
30
30
ns
tAOH
Page Mode Output Data Hold Time
10
10
ns
tWC
Write Cycle Time
65
10000
70
10000
ns
tWP
Write Pulse Width
50
50
ns
tCW
Chip Enable to End of Write
65
70
ns
tBW
Data Byte Control to End of Write
60
60
ns
tAW
Address Valid to End of Write
60
60
ns
tAS
Address Set-up Time
0
0
ns
tWR
Write Recovery Time
0
0
ns
tODW
WE Low to Output High-Z
20
20
ns
tOEW
WE High to Output Active
0
0
ns
tDS
Data Set-up Time
30
30
ns
tDH
Data Hold Time
0
0
ns
tCS
CE2 Set-up Time
0
0
ns
tCH
CE2 Hold Time
300
300
µs
tDPD
CE2 Pulse Width
10
10
ms
tCHC
CE2 Hold from CE1
0
0
ns
tCHP
CE2 Hold from Power On
30
30
µs
AC TEST CONDITIONS
PARAMETER
CONDITION
Output load
30 pF
+ 1 TTL Gate
Input pulse level
VDD − 0.2 V, 0.2 V
Timing measurements
VDD × 0.5
Reference level
VDD× 0.5
tR, tF
5 ns


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