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TC51WHM616AXBN70 데이터시트(HTML) 3 Page - Toshiba Semiconductor

부품명 TC51WHM616AXBN70
상세내용  TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
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제조사  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
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TC51WHM616AXBN70 데이터시트(HTML) 3 Page - Toshiba Semiconductor

 
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TC51WHM616AXBN65,70
2002-08-22
3/11
ABSOLUTE MAXIMUM RATINGS (See Note 1)
SYMBOL
RATING
VALUE
UNIT
VDD
Power Supply Voltage
−1.0 to 3.6
V
VIN
Input Voltage
−1.0 to 3.6
V
VOUT
Output Voltage
−1.0 to 3.6
V
Topr.
Operating Temperature
−25 to 85
°C
Tstrg.
Storage Temperature
−55 to 150
°C
Tsolder
Soldering Temperature (10 s)
260
°C
PD
Power Dissipation
0.6
W
IOUT
Short Circuit Output Current
50
mA
DC RECOMMENDED OPERATING CONDITIONS (Ta
==== −−−−25°C to 85°C)
SYMBOL
PARAMETER
MIN
TYP.
MAX
UNIT
VDD
Power Supply Voltage
2.6
2.75
3.3
VIH
Input High Voltage
2.0
VDD + 0.3*
VIL
Input Low Voltage
−0.3*
0.4
V
* : VIH(Max) VDD+1.0 V with 10 ns pulse width
VIL(Min) -1.0 V with 10 ns pulse width
DC CHARACTERISTICS (Ta
==== −−−−25°C to 85°C, VDD ==== 2.6 to 3.3 V) (See Note 3 to 4)
SYMBOL
PARAMETER
TEST CONDITION
MIN
TYP.
MAX
UNIT
IIL
Input Leakage Current
VIN = 0 V to VDD
−1.0
+1.0
µA
ILO
Output Leakage Current
Output disable, VOUT = 0 V to VDD
−1.0
+1.0
µA
VOH
Output High Voltage
IOH = − 0.5 mA
2.0
V
VOL
Output Low Voltage
IOL = 1.0 mA
0.4
V
IDDO1
Operating Current
CE1
= VIL
CE2
= VIH, IOUT = 0 mA
tRC = min
50
mA
IDDO2
Page Access Operating Current
CE1
= VIL, CE2 = VIH,
Page add. cycling, IOUT = 0 mA
tPC = min
25
mA
IDDS
Standby Current(MOS)
CE1
= VDD − 0.2 V, CE2 = VDD − 0.2 V
100
µA
IDDSD
Deep Power-down Standby Current
CE2
= 0.2 V
5
µA
CAPACITANCE (Ta
==== 25°C, f ==== 1 MHz)
SYMBOL
PARAMETER
TEST CONDITION
MAX
UNIT
CIN
Input Capacitance
VIN = GND
10
pF
COUT
Output Capacitance
VOUT = GND
10
pF
Note: This parameter is sampled periodically and is not 100% tested.


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