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TLE6216G 데이터시트(PDF) 6 Page - Infineon Technologies AG |
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TLE6216G 데이터시트(HTML) 6 Page - Infineon Technologies AG |
6 / 17 page Datasheet TLE 6216 V7.1 Page 6 of 17 18.10.02 Electrical Characteristics Parameter and Conditions Symbol Values Unit VS = 4.8 to 18 V ; Tj = - 40 °C to + 150 °C (unless otherwise specified) min typ max 1. Power Supply (VS) Supply current (Outputs ON) IS 8mA Supply current (Outputs OFF) VENA = L, VSTBY = H IS 4mA Operating voltage VS 4.8 32 V Standby current VSTBY = L IS 10 µA 2. Power Outputs ON state resistance Channel 1,2 Tj = 25 ° C ID = 1A; VS ³ 9.5 V Tj = 125°C 1 Tj = 150°C 2 RDS(ON) 0.2 0.5 0.5 W ON state resistance Channel 3,4 Tj = 25 ° C ID = 1A; VS ³ 9.5 V Tj = 125°C 1 Tj = 150°C 2 RDS(ON) 0.35 0.75 0.75 W Z-Diode clamping voltage (OUT1...4) ID ³ 100 mA VDS(AZ) 45 60 V Pull down resistor Tj = 25 °C VSTBY = H, VIN = L Tj = -40 °C ...150°C RPD 14 10 20 26 40 k W Output Leakage Current VSTBY = L Tj = -40°C...150°C wafer test at 25°C IDlk 5 1 mA mA Output on delay time 3 ID = 1 A Output off delay time 3 ID = 1 A Output on fall time 3 ID = 1 A Output off rise time 3 ID = 1 A Output off status delay time 3 ID = 1 A Output on status delay time 4 Overload switch-off delay time ton toff tfall trise t4 t5 tDSO 0 5 5 5 10 50 5 100 25 40 50 50 60 50 300 µs 3. Digital Inputs (IN1, IN2, IN3, IN4, ENA) Input low voltage VINL - 0.3 1.0 V Input high voltage VINH 2.0 6.0 V Input voltage hysteresis 4 VINHys 50 100 mV Input pull down current VIN = 5 V; VS ³ 6.5 V IIN 10 30 60 µA Enable pull down current VENA = 5 V; VS ³ 6.5 V IENA 10 20 40 µA 4. Digital Status Outputs (ST1 - ST4) open Drain Output voltage low IST = 2 mA VSTL 0.5 V Leakage current high ISTH 2µA 1 Measured on P-DSO-20 devices 2 Measured on chip, bond wires not included 3 See timing diagram, resitive load condition; VS ³ 9 V 4 This parameter will not be tested but assured by design |
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