2N5061RLR datasheet(1/8 Pages) ONSEMI

부품명	2N5061RLR

상세설명	Sensitive Gate Silicon Controlled Rectifiers

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January, 2005 − Rev. 7

1

Publication Order Number:

2N5060/D

2N5060 Series

Preferred Device

Sensitive Gate

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

Annular PNPN devices designed for high volume consumer

applications such as relay and lamp drivers, small motor controls, gate

drivers for larger thyristors, and sensing and detection circuits.

Supplied in an inexpensive plastic TO−92/TO-226AA package which

is readily adaptable for use in automatic insertion equipment.

Features

• Sensitive Gate Trigger Current − 200 mA Maximum

• Low Reverse and Forward Blocking Current − 50 mA Maximum,

TC = 110°C

• Low Holding Current − 5 mA Maximum

• Passivated Surface for Reliability and Uniformity

• Device Marking: Device Type, e.g., 2N5060, Date Code

• Pb−Free Packages are Available*

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

SILICON CONTROLLED

RECTIFIERS

0.8 A RMS, 30 − 200 V

Preferred devices are recommended choices for future use

and best overall value.

3

2

1

K

G

A

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

ORDERING INFORMATION

TO−92

CASE 29

STYLE 10

50xx

Specific Device Code

Y

= Year

WW

= Work Week

MARKING

DIAGRAM

2N

50xx

YWW

PIN ASSIGNMENT

1

2

3

Gate

Anode

Cathode

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