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TC58FVT321FT-10 ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 14 Page - Toshiba Semiconductor

๋ถ€ํ’ˆ๋ช… TC58FVT321FT-10
์ƒ์„ธ๋‚ด์šฉ  TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY
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TC58FVT321FT-10 ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 14 Page - Toshiba Semiconductor

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TC58FVT321/B321FT/XB-70,-10
2002-08-06
14/48
COMMON FLASH MEMORY INTERFACE (CFI)
The TC58FVT321/B321 conforms to the CFI specifications. To read information from the device, input the
Query command followed by the address. In Word Mode DQ8~DQ15 all output 0s. To exit this mode, input the
Reset command.
CFI CODE TABLE
ADDRESS A6~A0
DATA DQ15~DQ0
DESCRIPTION
10H
11H
12H
0051H
0052H
0059H
ASCII string โ€œQRYโ€
13H
14H
0002H
0000H
Primary OEM command set
2: AMD/FJ standard type
15H
16H
0040H
0000H
Address for primary extended table
17H
18H
0000H
0000H
Alternate OEM command set
0: none exists
19H
1AH
0000H
0000H
Address for alternate OEM extended table
1BH
0027H
VDD (min) (Write/Erase)
DQ7~DQ4: 1 V
DQ3~DQ0: 100 mV
1CH
0036H
VDD (max) (Write/Erase)
DQ7~DQ4: 1 V
DQ3~DQ0: 100 mV
1DH
0000H
VPP (min) voltage
1EH
0000H
VPP (max) voltage
1FH
0004H
Typical time-out per single byte/word write (2
N ยตs)
20H
0000H
Typical time-out for minimum size buffer write (2
N ยตs)
21H
000AH
Typical time-out per individual block erase (2
N
ms)
22H
0000H
Typical time-out for full chip erase (2
N
ms)
23H
0005H
Maximum time-out for byte/word write (2
N
times typical)
24H
0000H
Maximum time-out for buffer write (2
N
times typical)
25H
0004H
Maximum time-out per individual block erase (2
N
times typical)
26H
0000H
Maximum time-out for full chip erase (2
N
times typical)
27H
0016H
Device Size (2
N
byte)
28H
29H
0002H
0000H
Flash device interface description
2:
ร—8/ร—16
2AH
2BH
0000H
0000H
Maximum number of bytes in multi-byte write (2
N
)


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