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TC58FVT321FT-10 데이터시트(HTML) 20 Page - Toshiba Semiconductor

부품명 TC58FVT321FT-10
상세내용  TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY
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제조사  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
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TC58FVT321FT-10 데이터시트(HTML) 20 Page - Toshiba Semiconductor

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TC58FVT321/B321FT/XB-70,-10
2002-08-06
20/48
DC CHARACTERISTICS
SYMBOL
PARAMETER
CONDITION
MIN
MAX
UNIT
ILI
Input Leakage Current
0 V
≤ VIN ≤ VDD
±1
ILO
Output Leakage Current
0 V
≤ VOUT ≤ VDD
±1
µA
IOH = −0.1 mA
VDD − 0.4
VOH
Output High Voltage
IOH = −2.5 mA
0.85
× VDD
VOL
Output Low Voltage
IOL = 4.0 mA
0.4
V
IDDO1
VDD Average Read Current
VIN = VIH/VIL, IOUT = 0 mA
tCYCLE = tRC = 100 ns
30
IDDO2
VDD Average Program Current
VIN = VIH/VIL, IOUT = 0 mA
15
IDDO3
VDD Average Erase Current
VIN = VIH/VIL, IOUT = 0 mA
15
IDDO4
VDD Average
Read-While-Program Current
VIN = VIH/VIL, IOUT = 0 mA
tCYCLE = tRC = 100 ns
45
IDDO5
VDD Average Read-while-Erase
Current
VIN = VIH/VIL, IOUT = 0 mA
tCYCLE = tRC = 100 ns
45
IDDO6
VDD Average Program-while-
Erase-Suspend Current
VIN = VIH/VIL, IOUT = 0 mA
15
mA
IDDS1
VDD Standby Current
CE
= RESET = VDD
or RESET
= VSSV
10
IDDS2
VDD Standby Current
(Automatic Sleep Mode
(1)
)
VIH = VDD
VIL = VSS
10
IID
High-Voltage Input Current for
A9, OE and RESET
11.4 V
≤ VID ≤ 12.6 V
35
µA
IACC
High-Voltage Input Current for
/ACC
WP
8.5 V
≤ VACC ≤ 9.5 V
20
mA
VLKO
Low-VDD Lock-out Voltage
2.3
2.5
V
(1) The device enters Automatic Sleep Mode in which the address remains fixed for during 150 ns.
AC TEST CONDITIONS
PARAMETER
CONDITION
Input Pulse Level
VDD, 0.0 V
Input Pulse Rise and Fall Time (10%~90%)
5 ns
Timing Measurement Reference Level (input)
1.5 V, 1.5 V
Timing Measurement Reference Level (output)
1.5 V, 1.5 V
Output Load
CL (100 pF) + 1 TTL Gate
/
CL (30 pF) + 1 TTL Gate


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