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SI7856DP 데이터시트(PDF) 1 Page - Vishay Siliconix |
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SI7856DP 데이터시트(HTML) 1 Page - Vishay Siliconix |
1 / 4 page FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile APPLICATIONS D DC/DC Converters D Synchronous Rectifiers Si7856DP Vishay Siliconix New Product Document Number: 71850 S-20351—Rev. A, 18-Apr-02 www.vishay.com 1 N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 25 30 0.0055 @ VGS = 4.5 V 23 1 2 3 4 5 6 7 8 S S S G D D D D 6.15 mm 5.15 mm PowerPAK t SO-8 Bottom View N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20 V _ TA = 25_C 25 14 Continuous Drain Current (TJ = 150_C)a TA = 70_C ID 19 11 Pulsed Drain Current (10 ms Pulse Width) IDM 60 A Continuous Source Current (Diode Conduction)a IS 4.5 1.6 TA = 25_C 5.4 1.9 Maximum Power Dissipationa TA = 70_C PD 3.4 1.2 W Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t v 10 sec 18 23 Maximum Junction-to-Ambienta Steady State RthJA 50 65 _C/W Maximum Junction-to-Case (Drain) Steady State RthJC 1.0 1.5 C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. |
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