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BCW68G 데이터시트(PDF) 2 Page - Micro Commercial Components |
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BCW68G 데이터시트(HTML) 2 Page - Micro Commercial Components |
2 / 3 page Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Min. TYP. Max. Unit DC Current Gain(1) at VCE = 10V, IC = 100 µAhFE 50 ––– at VCE = 1V, IC = 10mA hFE 120 – – – at VCE = 1V, IC = 100mA hFE 160 250 400 – at VCE = 2V, IC = 500mA hFE 60 ––– Collector-Emitter Saturation Voltage(1) at IC = 100mA, IB = 10mA VCEsat – – 0.3 V at IC = 500mA, IB = 50mA VCEsat – – 0.7 V Base-Emitter Saturation Voltage(1) at IC = 100mA, IB = 10mA VBEsat – – 1.25 V at IC = 500mA, IB = 50mA VBEsat ––2 V Collector-Emitter Breakdown Voltage at IC = 10mA, IB = 0 V(BR)CEO 45 – – V Collector-Base Breakdown Voltage at IC = 10 µA, IB = 0 V(BR)CBO 60 – – V Emitter-Base Breakdown Voltage at IE = 10 µA, at IC = 0 V(BR)EBO 5–– V Collector-Base Cut-off Current at VCB = 45V, IE = 0 ICBO – – 20 nA at VCB = 45V, IE = 0, TA = 150°C ICBO –– 20 µA Emitter-Base Cut-off Current at VEB = 4V, IC = 0 IEBO – – 20 nA Gain-Bandwidth Product at VCE = 5V, IC = 50mA, f = 20MHZ fT – 200 – MHz Collector-Base Capacitance at VCB = 10V, f = 1MHz CCB –6– pF Emitter-Base Capacitance at VEB = 0.5V, f = 1MHz CEB –60– pF Note: (1) Pulse test: t ≤ 300µs, D = 2% MCC BCW68G Revision: B 2013/01/01 TM Micro Commercial Components www.mccsemi.com 2 of 3 |
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