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IRHNJ8130 데이터시트(PDF) 1 Page - International Rectifier

부품명 IRHNJ8130
상세설명  100V, N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRHNJ8130 데이터시트(HTML) 1 Page - International Rectifier

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Absolute Maximum Ratings
Parameter
Units
ID @ VGS = 12V, TC = 25°C
Continuous Drain Current
14.4
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
9.1
IDM
Pulsed Drain Current Œ
58
PD @ TC = 25°C
Max. Power Dissipation
75
W
Linear Derating Factor
0.6
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
150 
mJ
IAR
Avalanche Current Œ
14.4
A
EAR
Repetitive Avalanche Energy Œ
7.5
mJ
dv/dt
Peak Diode Recovery dv/dt
6.0 Ž
V/ns
T J
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Pckg. Mounting Surface Temp.
300 (for 5s)
Weight
1.0 (Typical)
g
Pre-Irradiation
International Rectifier’s RAD-HardTM HEXFET® MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low RDS(on) and low gate charge reduces
the power losses in switching applications such as DC
to DC converters and motor control. These devices re-
tain all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of parallel-
ing and temperature stability of electrical parameters.
oC
A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
2/4/00
www.irf.com
1
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Surface Mount
n Light Weight
For footnotes refer to the last page
SMD-0.5
IRHNJ7130
100V, N-CHANNEL
RAD-Hard
HEXFET
®
MOSFET TECHNOLOGY
Product Summary
Part Number Radiation Level
RDS(on)
ID
IRHNJ7130
100K Rads (Si)
0.18
14.4A
IRHNJ3130
300K Rads (Si)
0.18
14.4A
IRHNJ4130
600K Rads (Si)
0.18
14.4A
IRHNJ8130 1000K Rads (Si)
0.18
14.4A
PD - 93820


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