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74LVC1G86GW 데이터시트(PDF) 2 Page - NXP Semiconductors

부품명 74LVC1G86GW
상세설명  2-input EXCLUSIVE-OR gate
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제조업체  PHILIPS [NXP Semiconductors]
홈페이지  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

74LVC1G86GW 데이터시트(HTML) 2 Page - NXP Semiconductors

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2001 Apr 06
2
Philips Semiconductors
Preliminary specification
2-input EXCLUSIVE-OR gate
74LVC1G86
FEATURES
• Wide supply voltage range from 1.65 to 5.5 V
• High noise immunity
• Complies with JEDEC standard:
– JESD8-7 (1.65 to 1.95 V)
– JESD8-5 (2.3 to 2.7 V)
– JESD8B/JESD36 (2.7 to 3.6 V).
•±24 mA output drive (VCC = 3.0 V)
• CMOS low power consumption
• Latch-up performance ≤250 mA
• Direct interface with TTL levels
• SOT353 package.
DESCRIPTION
The 74LVC1G86 is a high-performance, low-power,
low-voltage, Si-gate CMOS device, superior to most
advanced CMOS compatible TTL families.
Inputs can be driven from either 3.3 or 5 V devices. These
features allow the use of these devices in a mixed
3.3 and 5 V environment.
This device is fully specified for partial power-down
applications using Ioff. The Ioff circuitry disables the output,
preventing the damaging backflow current through the
device when it is powered down.
The 74LVC1G86 provides the 2-input EXCLUSIVE-OR
function.
QUICK REFERENCE DATA
GND = 0 V; Tamb =25 °C; tr =tf ≤ 2.5 ns.
Notes
1. CPD is used to determine the dynamic power dissipation (PD in µW).
PD =CPD × VCC2 × fi +(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts.
2. The condition is VI = GND to VCC.
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
tPHL/tPLH
propagation delay A and B to Y
VCC = 1.8 V; CL = 30 pF; RL =1kΩ
3.7
ns
VCC = 2.5 V; CL = 30 pF; RL = 500 Ω
2.5
ns
VCC = 3.3 V; CL = 50 pF; RL = 500 Ω
2.3
ns
VCC = 5.0 V; CL = 50 pF; RL = 500 Ω
1.9
ns
CI
input capacitance
5
pF
CPD
power dissipation capacitance per
buffer
notes 1 and 2
25
pF


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