전자부품 데이터시트 검색엔진 |
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AD5255 데이터시트(PDF) 5 Page - Analog Devices |
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AD5255 데이터시트(HTML) 5 Page - Analog Devices |
5 / 20 page AD5255 Rev. 0 | Page 5 of 20 ELECTRICAL CHARACTERISTICS Single Supply: VDD = 3 V to 5.5 V and −40°C < TA< +85°C, unless otherwise noted. Dual Supply: VDD = +2.25 V or +2.75 V , VSS = −2.25 V or −2.75 V and −40°C < TA < + 85°C, unless otherwise noted. Table 2. Parameter Symbol Conditions Min Typ1 Max Unit DYNAMIC CHARACTERISTICS5, 7 Bandwidth −3 dB BW VDD/VSS = ±2.5 V, RAB = 25 kΩ/250 kΩ 125/12 kHz Total Harmonic Distortion THDW VA = 1 V rms, VB = 0 V, f = 1 kHz 0.05 % VW Settling Time tS VA = VDD, VB = 0 V, VW = 0.50% error band, code 0x000 to 0x100, RAB = 25 kΩ/250 kΩ 4/36 µs Resistor Noise Spectral Density eN_WB RAB = 25 kΩ/250 kΩ, TA = 25°C 14/45 nV√Hz Digital Crosstalk CT VA = VDD, VB = 0 V, measure VW with adjacent RDAC making full-scale change −80 dB Analog Crosstalk CAT Signal input at A0 and measure output at W1, f = 1 kHz −72 dB INTERFACE TIMING CHARACTERISTICS (apply to all parts) (Notes8, 9) SCL Clock Frequency fSCL 400 kHz tBUF Bus Free Time between Stop and Start t1 1.3 µs tHD;STA Hold Time (Repeated Start) t2 After this period the first clock pulse is generated 600 ns tLOW Low Period of SCL Clock t3 1.3 µs tHIGH High Period of SCL Clock t4 0.6 50 µs tSU;STA Setup Time for Start Condition t5 600 ns tHD;DAT Data Hold Time t6 900 ns tSU;DAT Data Setup Time t7 100 ns tR Rise Time of Both SDA and SCL Signals t8 300 ns tF Fall Time of Both SDA and SCL Signals t9 300 ns tSU;STO Setup Time for Stop Condition t10 600 ns EEMEM Data Storing Time tEEMEM_STORE 26 ms EEMEM Data Restoring Time at Power-On tEEMEM_RESTORE1 360 µs EEMEM Data Restoring Time on Restore tEEMEM_RESTORE2 360 µs Command or Reset Operation EEMEM Data Rewritable Time tEEMEM_REWRITE 540 µs FLASH/EE MEMORY RELIABILITY Endurance10 100 kcycles Data Retention11 55°C 100 years 1 Typical represent average readings at 25°C, VDD = 5 V. 2 Resistor position nonlinearity error R-INL is the deviation from an ideal value measured between the maximum resistance and the minimum resistance wiper positions. R-DNL measures the relative step change from ideal between successive tap positions. 3 INL and DNL are measured at VW with the RDAC configured as a potentiometer divider similar to a voltage output D/A converter. VA = VDD and VB = 0 V. 4 Resistor Terminals A, B, W have no limitations on polarity with respect to each other. 5 Guaranteed by design and not subject to production test. 6 PDISS is calculated from (IDD × VDD). CMOS logic level inputs result in minimum power dissipation. 7 All dynamic characteristics use VDD = 5 V. 8 Bandwidth, noise, and settling time are dependent on the terminal resistance value chosen. The lowest R value results in the fastest settling time and highest bandwidth. The highest R value results in the minimum overall power consumption. 9 See the timing diagram for location of measured values. 10 Endurance is qualified to 100,000 cycles as per JEDEC Std. 22 method A117 and measured at −40°C, +25°C, and +85°C, typical endurance at 25°C is 700,000 cycles. 11 Retention lifetime equivalent at junction temperature (TJ) = 55°C as per JEDEC Std. 22, Method A117. Retention lifetime based on an activation energy of 0.6eV derates with junction temperature. |
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