RN4607 datasheet(3/5 Pages) TOSHIBA

부품명	RN4607

상세설명	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)

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제조업체	TOSHIBA [Toshiba Semiconductor]

홈페이지	http://www.semicon.toshiba.co.jp/eng

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3 / 5 page

RN4607

2001-06-05

3

Q1 Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test

Circuit

Test Condition

Min

Typ.

Max

Unit

ICBO

―

VCB = −50V, IE = 0

―

−100

Collector cut-off current

ICEO

―

VCE = −50V, IB = 0

―

−500

nA

Emitter cut-off current

IEBO

―

VEB = −6V, IC = 0

−0.081

―

−0.15

mA

DC current gain

hFE

―

VCE = −5V, IC = −10mA

80

―

Collector-emitter saturation voltage

VCE (sat)

―

IC = −5mA, IB = −0.25mA

―

−0.1

−0.3

V

Input voltage (ON)

VI (ON)

―

VCE = −0.2V, IC = −5mA

−0.7

―

−1.8

V

Input voltage (OFF)

VI (OFF)

―

VCE = −5V, IC = −0.1mA

−0.5

―

−0.8

V

Transition frequency

fT

―

VCE = −10V, IC = −5mA

―

200

―

MHz

Collector output capacitance

Cob

―

VCB = −10V, IE = 0

―

3

6

pF

Q2 Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test

Circuit

Test Condition

Min

Typ.

Max

Unit

ICBO

―

VCB = 50V, IE = 0

―

100

Collector cut-off current

ICEO

―

VCE = 50V, IB = 0

―

500

nA

Emitter cut-off current

IEBO

―

VEB = 6V, IC = 0

0.081

―

0.15

mA

DC current gain

hFE

―

VCE = 5V, IC = 10mA

80

―

Collector-emitter saturation voltage

VCE (sat)

―

IC = 5mA, IB = 0.25mA

―

0.1

0.3

V

Input voltage (ON)

VI (ON)

―

VCE = 0.2V, IC = 5mA

0.7

―

1.8

V

Input voltage (OFF)

VI (OFF)

―

VCE = 5V, IC = 0.1mA

0.5

―

0.8

V

Transition frequency

fT

―

VCE = 10V, IC = 5mA

―

250

―

MHz

Collector output capacitance

Cob

―

VCB = 10V, IE = 0, f = 1 MHz

―

3

6

pF

Q1, Q2 Common Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test

Circuit

Test Condition

Min

Typ.

Max

Unit

Input resistor

R1

―

7

10

13

kΩ

Resistor ratio

R1/R2

―

0.191

0.213

0.232

―

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RN4607 데이터시트(PDF) 3 Page - Toshiba Semiconductor

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유사한 부품 번호 - RN4607

유사한 설명 - RN4607

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