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TC55VEM208ASTN55 데이터시트(HTML) 3 Page - Toshiba Semiconductor

부품명 TC55VEM208ASTN55
상세내용  TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
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제조사  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
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TC55VEM208ASTN55 데이터시트(HTML) 3 Page - Toshiba Semiconductor

 
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TC55VEM208ASTN40,55
2002-08-07
3/11
DC RECOMMENDED OPERATING CONDITIONS (Ta
==== −−−−40° to 85°C)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNIT
VDD
Power Supply Voltage
2.3
3.6
V
VDD = 2.3 V~2.7 V
2.0
VIH
Input High Voltage
VDD = 2.7 V~3.6 V
2.2
VDD + 0.3
V
VIL
Input Low Voltage
−0.3*
VDD × 0.24
V
VDH
Data Retention Supply Voltage
1.5
3.6
V
*:
−2.0 V when measured at a pulse width of 20ns
DC CHARACTERISTICS (Ta
==== −−−−40° to 85°C, VDD ==== 2.3 to 3.6 V)
SYMBOL
PARAMETER
TEST CONDITION
MIN
TYP
MAX UNIT
IIL
Input Leakage
Current
VIN = 0 V~VDD
±1.0
µA
IOH
Output High Current VOH = VDD − 0.5 V
−0.5
mA
IOL
Output Low Current
VOL = 0.4 V
2.1
mA
ILO
Output Leakage
Current
CE
= VIH or R/W = VIL or OE = VIH, VOUT = 0 V~VDD
±1.0
µA
MIN
35
IDDO1
CE
= VIL and R/W = VIH,
IOUT = 0 mA,
Other Input
= VIH/VIL
1
µs
8
mA
MIN
30
IDDO2
Operating Current
CE
= 0.2 V and R/W = VDD − 0.2 V,
IOUT = 0 mA,
Other Input
= VDD − 0.2 V/0.2 V
tcycle
1
µs
3
mA
IDDS1
CE
= VIH
1
mA
VDD =
3.3V
± 0.3 V
Ta
= −40~85°C
10
Ta
= 25°C
0.7
Ta
= −40~40°C
2
IDDS2
Standby Current
CE
= VDD − 0.2 V
VDD =3.0 V
Ta
= −40~85°C
5
µA
CAPACITANCE (Ta
==== 25°C, f ==== 1 MHz)
SYMBOL
PARAMETER
TEST CONDITION
MAX
UNIT
CIN
Input Capacitance
VIN = GND
10
pF
COUT
Output Capacitance
VOUT = GND
10
pF
Note:
This parameter is periodically sampled and is not 100% tested.


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