www.irf.com

1

3/31/04

Notes

DIGITAL AUDIO MOSFET

IRLIB4343

Features

l

Advanced Process Technology

l

Key Parameters Optimized for Class-D Audio

Amplifier Applications

l

l

Efficiency

l

l

175°C Operating Junction Temperature for

Ruggedness

l

Repetitive Avalanche Capability for Robustness and

Reliability

Description

This Digital Audio HEXFET

processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery

and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD

and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability.

These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier

applications.

55

V

42

m

:

57

m

:

28

nC

175

°C

Key Parameters

TO-220 Full-Pak

S

D

G

Absolute Maximum Ratings

Parameter

Units

Drain-to-Source Voltage

V

Gate-to-Source Voltage

A

Pulsed Drain Current

c

Power Dissipation

W

Power Dissipation

Linear Derating Factor

W/°C

Operating Junction and

°C

Storage Temperature Range

Mounting torque, 6-32 or M3 screw

Thermal Resistance

Parameter

Typ.

Max.

Units

Junction-to-Case

f

–––

3.84

°C/W

Junction-to-Ambient

f

–––

65

Max.

13

80

±20

55

19

10lb

xin (1.1Nxm)

-40 to + 175

39

20

0.26

PD - 95857A