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TC55V8512FTI-12 ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 2 Page - Toshiba Semiconductor

๋ถ€ํ’ˆ๋ช… TC55V8512FTI-12
์ƒ์„ธ๋‚ด์šฉ  TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
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์ œ์กฐ์‚ฌ  TOSHIBA [Toshiba Semiconductor]
ํ™ˆํŽ˜์ด์ง€  http://www.semicon.toshiba.co.jp/eng
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TC55V8512FTI-12 ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 2 Page - Toshiba Semiconductor

 
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TC55V8512JI/FTI-12,-15
2001-12-19
2/10
BLOCK DIAGRAM
MAXIMUM RATINGS
SYMBOL
RATING
VALUE
UNIT
VDD
Power Supply Voltage
โˆ’0.5 to 4.6
V
VIN
Input Terminal Voltage
โˆ’0.5* to 4.6
V
VI/O
Input/Output Terminal Voltage
โˆ’0.5* to VDD + 0.5**
V
PD
Power Dissipation
1.4
W
Tsolder
Soldering Temperature (10s)
260
ยฐC
Tstg
Storage Temperature
โˆ’65 to 150
ยฐC
Topr
Operating Temperature
โˆ’40 to 100
ยฐC
*:
โˆ’1.5 V with a pulse width of 20%๏ฝฅtRC min (4 ns max)
**: VDD + 1.5 V with a pulse width of 20%๏ฝฅtRC min (4 ns max)
DC RECOMMENDED OPERATING CONDITIONS (Ta
==== โˆ’โˆ’โˆ’โˆ’40ยฐ to 85ยฐC)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNIT
VDD
Power Supply Voltage
3.0
3.3
3.6
V
VIH
Input High Voltage
2.0
๏ฃง
VDD + 0.3**
V
VIL
Input Low Voltage
โˆ’0.3*
๏ฃง
0.8
V
*:
โˆ’1.0 V with a pulse width of 20%๏ฝฅtRC min (4 ns max)
**: VDD + 1.0 V with a pulse width of 20%๏ฝฅtRC min (4 ns max)
MEMORY CELL ARRAY
512
ร— 1,024 ร— 8
(4,194,304)
VDD
GND
CE
A0
A1
A4
A8
A9
A12
A14
A15
A16
COLUMN DECODER
CE
WE
SENSE AMP
CLOCK
GENERATOR
CE
I/O1
I/O8
OE
CE
A2 A3 A5 A6 A7 A10 A11A13
A17
A18
COLUMN ADDRESS BUFFER
I/O2
I/O3
I/O4
I/O5
I/O5
I/O7


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