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TPC8104-H 데이터시트(PDF) 1 Page - Toshiba Semiconductor |
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TPC8104-H 데이터시트(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page TPC8104-H 2002-09-11 1 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII) TPC8104−H High Speed and High Efficiency DC−DC Converters Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications l Small footprint due to small and thin package l High speed switching l Small gate charge : Qg = 17 nC (typ.) l Low drain−source ON resistance : RDS (ON) = 38 mΩ (typ.) l High forward transfer admittance : |Yfs| = 7.0 S (typ.) l Low leakage current : IDSS = −10 µA (max) (VDS = −30 V) l Enhancement−mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS −30 V Drain-gate voltage (RGS = 20 kΩ) VDGR −30 V Gate-source voltage VGSS ±20 V DC (Note 1) ID −5 Drain current Pulse (Note 1) IDP −20 A Drain power dissipation (t = 10 s) (Note 2a) PD 2.4 W Drain power dissipation (t = 10 s) (Note 2b) PD 1.0 W Single pulse avalanche energy (Note 3) EAS 32.5 mJ Avalanche current IAR −5 A Repetitive avalanche energy (Note 2a) (Note 4) EAR 0.24 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-6J1B Weight: 0.080 g (typ.) Circuit Configuration |
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