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CY7C1460KV25 데이터시트(PDF) 1 Page - Cypress Semiconductor |
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CY7C1460KV25 데이터시트(HTML) 1 Page - Cypress Semiconductor |
1 / 32 page 36-Mbit (1M × 36/2M × 18) Pipelined SRAM with NoBL™ Architecture (With ECC) CY7C1460KV25/CY7C1462KV25 CY7C1460KVE25/CY7C1462KVE25 Cypress Semiconductor Corporation • 198 Champion Court • San Jose , CA 95134-1709 • 408-943-2600 Document Number: 001-66679 Rev. *J Revised February 7, 2018 36-Mbit (1M × 36/2M × 18) Pipelined SRAM with NoBL™ Architecture (With ECC) Features ■ Pin-compatible and functionally equivalent to ZBT™ ■ Supports 250 MHz bus operations with zero wait states ❐ Available speed grades are 250 MHz, 200 MHz, and 167 MHz ■ Internally self-timed output buffer control to eliminate the need to use asynchronous OE ■ Fully registered (inputs and outputs) for pipelined operation ■ Byte Write capability ■ 2.5 V core power supply ■ 2.5 V I/O power supply ■ Fast clock-to-output times ❐ 2.5 ns (for 250 MHz device) ■ Clock enable (CEN) pin to suspend operation ■ Synchronous self-timed writes ■ CY7C1460KV25, CY7C1462KV25, CY7C1460KVE25 and CY7C1462KVE25 available in JEDEC-standard Pb-free 100-pin TQFP, and Pb-free and non Pb-free 165-ball FBGA packages. ■ IEEE 1149.1 JTAG-Compatible Boundary Scan ■ Burst capability — linear or interleaved burst order ■ “ZZ” sleep mode option ■ On-chip error correction code (ECC) to reduce soft error rate (SER) Functional Description The CY7C1460KV25/CY7C1462KV25/CY7C1460KVE25/ CY7C1462KVE25 are 2.5 V, 1M × 36/2M × 18 synchronous pipelined burst SRAMs with No Bus Latency™ (NoBL™) logic, respectively. They are designed to support unlimited true back-to-back read/write operations with no wait states. The CY7C1460KV25/CY7C1462KV25/CY7C1460KVE25/ CY7C1462KVE25 are equipped with the advanced NoBL logic required to enable consecutive read/write operations with data being transferred on every clock cycle. This feature dramatically improves the throughput of data in systems that require frequent write/read transitions. The CY7C1460KV25/CY7C1462KV25/ CY7C1460KVE25/CY7C1462KVE25 are pin-compatible and functionally equivalent to ZBT devices. All synchronous inputs pass through input registers controlled by the rising edge of the clock. All data outputs pass through output registers controlled by the rising edge of the clock. The clock input is qualified by the clock enable (CEN) signal, which when deasserted suspends operation and extends the previous clock cycle. Write operations are controlled by the byte write selects BWa–BWd for CY7C1460KV25/CY7C1460KVE25 and BWa–BWb for CY7C1462KV25/CY7C1462KVE25 and a write enable (WE) input. All writes are conducted with on-chip synchronous self-timed write circuitry. Three synchronous chip enables (CE1, CE2, CE3) and an asynchronous output enable (OE) provide for easy bank selection and output three-state control. In order to avoid bus contention, the output drivers are synchronously three-stated during the data portion of a write sequence. Selection Guide Description 250 MHz 200 MHz 167 MHz Unit Maximum access time 2.5 3.2 3.4 ns Maximum operating current × 18 220 190 170 mA × 36 240 210 190 |
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