IRF7324D1

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5

Power Mosfet Characteristics

Fig 10. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 9. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

0.1

1

10

100

0.0001

0.001

0.01

0.1

1

10

100

Notes:

1. Duty factor D = t / t

2. Peak T = P

x Z

+ T

1

2

J

DM

thJA

A

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

1

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

0

500

1000

1500

1

10

100

A

DS

-V

, D rain-to -S ourc e V oltage (V )

V

= 0 V ,

f = 1 M H z

C

= C

+ C

, C

S H O R TE D

C

= C

C

= C

+ C

GS

is s

g s

g d

d s

rs s

g d

o ss

d s

gd

0

2

4

6

8

10

0

5

10

15

20

25

G

A

F O R T E S T CIR CUIT

S EE F IGU RE 1 2

Q

, Tota l G ate C h arg e (n C )

I

= -2 .2 A

V

= -1 6 V

D

DS