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IRF7324D1 데이터시트(PDF) 1 Page - International Rectifier

부품명 IRF7324D1
상세설명  FETKY MOSFET / Schottky Diode
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRF7324D1 데이터시트(HTML) 1 Page - International Rectifier

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1
Parameter
Maximum
Units
ID @ TA = 25°C
Continuous Drain Current, V
GS@4.5V

-2.9
A
ID @ TA = 70°C
-2.3
IDM
Pulsed Drain Current Œ
-23
PD @TA = 25°C
Power Dissipation 
2.0
W
PD @TA = 70°C
1.3
Linear Derating Factor
16
mW/°C
VGS
Gate-to-Source Voltage
± 12
V
dv/dt
Peak Diode Recovery dv/dt 
-5.0
V/ns
TJ, TSTG
Junction and Storage Temperature Range
-55 to +150
°C
IRF7324D1
PRELIMINARY
PD- 91789
FETKY
MOSFET / Schottky Diode
Notes:
ΠRepetitive rating; pulse width limited by maximum junction temperature (see figure 11)
 I
SD ≤ -2.2A, di/dt ≤ -50A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Ž Pulse width
≤ 300µs; duty cycle ≤ 2%
 Surface mounted on FR-4 board, t
≤ 10sec.
Parameter
Maximum
Units
RθJA
Junction-to-Ambient 
62.5
°C/W
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Thermal Resistance Ratings
The FETKY
family of co-packaged HEXFETs and Schottky diodes offer
the designer
an
innovative board space saving solution for switching
regulator applications. Generation 5 HEXFETs utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. Combining
this technology
with International Rectifier's low forward drop Schottky
rectifiers results in an extremely efficient device suitable for use in a wide
variety of portable electronics applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics. The SO-8 package is designed for vapor phase,
infrared or wave soldering techniques.
Description
VDSS = -20V
RDS(on) = 0.18Ω
Schottky Vf = 0.39V
SO -8
TM
T op V ie w
8
1
2
3
4
5
6
7
A
A
S
G
D
D
K
K
l Co-packaged HEXFET
® Power
MOSFET and Schottky Diode
l Ideal for Mobile Phone Applications
l Generation V Technology
l SO-8 Footprint


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