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IRF7324D1 데이터시트(PDF) 1 Page - International Rectifier |
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IRF7324D1 데이터시트(HTML) 1 Page - International Rectifier |
1 / 8 page www.irf.com 1 Parameter Maximum Units ID @ TA = 25°C Continuous Drain Current, V GS@4.5V -2.9 A ID @ TA = 70°C -2.3 IDM Pulsed Drain Current -23 PD @TA = 25°C Power Dissipation 2.0 W PD @TA = 70°C 1.3 Linear Derating Factor 16 mW/°C VGS Gate-to-Source Voltage ± 12 V dv/dt Peak Diode Recovery dv/dt -5.0 V/ns TJ, TSTG Junction and Storage Temperature Range -55 to +150 °C IRF7324D1 PRELIMINARY PD- 91789 FETKY™ ™ ™ ™ ™ MOSFET / Schottky Diode Notes: Repetitive rating; pulse width limited by maximum junction temperature (see figure 11) I SD ≤ -2.2A, di/dt ≤ -50A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2% Surface mounted on FR-4 board, t ≤ 10sec. Parameter Maximum Units RθJA Junction-to-Ambient 62.5 °C/W Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Thermal Resistance Ratings The FETKY family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques. Description VDSS = -20V RDS(on) = 0.18Ω Schottky Vf = 0.39V SO -8 TM T op V ie w 8 1 2 3 4 5 6 7 A A S G D D K K l Co-packaged HEXFET ® Power MOSFET and Schottky Diode l Ideal for Mobile Phone Applications l Generation V Technology l SO-8 Footprint |
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