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TMP112 데이터시트(PDF) 4 Page - Texas Instruments |
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TMP112 데이터시트(HTML) 4 Page - Texas Instruments |
4 / 32 page 4 TMP112 SBOS473F – MARCH 2009 – REVISED FEBRUARY 2018 www.ti.com Product Folder Links: TMP112 Submit Documentation Feedback Copyright © 2009–2018, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT Supply voltage V+ 5 V Input voltage SCL, ADD0, and SDA –0.5 5 V Input voltage ALERT –0.5 (V+) + 0.5 V Output voltage –0.5 5 V Operating temperature –55 150 °C Junction temperature, TJ 150 °C Storage temperature, Tstg –60 150 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V Charged device model (CDM), per JEDEC specification JESD22-C101(2) ±1000 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT V+ Supply voltage 1.4 3.3 3.6 V TA Operating free-air temperature –40 125 °C (1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report. 6.4 Thermal Information THERMAL METRIC(1) TMP112 UNIT DRL (SOT563) 6 PINS RθJA Junction-to-ambient thermal resistance 200 °C/W RθJC(top) Junction-to-case (top) thermal resistance 73.7 °C/W RθJB Junction-to-board thermal resistance 34.4 °C/W ψJT Junction-to-top characterization parameter 3.1 °C/W ψJB Junction-to-board characterization parameter 34.2 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W |
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