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TMP112 데이터시트(PDF) 4 Page - Texas Instruments

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부품명 TMP112
상세설명  High-Accuracy, Low-Power, Digital Temperature Sensors With SMBus and Two-Wire Serial Interface in SOT563
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TMP112 데이터시트(HTML) 4 Page - Texas Instruments

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TMP112
SBOS473F – MARCH 2009 – REVISED FEBRUARY 2018
www.ti.com
Product Folder Links: TMP112
Submit Documentation Feedback
Copyright © 2009–2018, Texas Instruments Incorporated
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
MAX
UNIT
Supply voltage
V+
5
V
Input voltage
SCL, ADD0, and SDA
–0.5
5
V
Input voltage
ALERT
–0.5
(V+) + 0.5
V
Output voltage
–0.5
5
V
Operating temperature
–55
150
°C
Junction temperature, TJ
150
°C
Storage temperature, Tstg
–60
150
°C
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±2000
V
Charged device model (CDM), per JEDEC specification JESD22-C101(2)
±1000
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
V+
Supply voltage
1.4
3.3
3.6
V
TA
Operating free-air temperature
–40
125
°C
(1)
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report.
6.4 Thermal Information
THERMAL METRIC(1)
TMP112
UNIT
DRL (SOT563)
6 PINS
RθJA
Junction-to-ambient thermal resistance
200
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
73.7
°C/W
RθJB
Junction-to-board thermal resistance
34.4
°C/W
ψJT
Junction-to-top characterization parameter
3.1
°C/W
ψJB
Junction-to-board characterization parameter
34.2
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
°C/W


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