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TPC6201 데이터시트(PDF) 4 Page - Toshiba Semiconductor |
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TPC6201 데이터시트(HTML) 4 Page - Toshiba Semiconductor |
4 / 6 page TPC6201 2002-01-17 4 Ambient temperature Ta (°C) RDS (ON) – Ta Drain-source voltage VDS (V) IDR – VDS Capacitance – VDS Ambient temperature Ta (°C) Vth – Ta Ambient temperature Ta (°C) PD – Ta Total gate charge Qg (nC) Dynamic input/output characteristics Drain-source voltage VDS (V) 0.1 1 30 0 -0.4 -0.6 -0.8 -1 -1.2 -0.2 3 0.3 100 Common source Ta = 25°C Pulse test 10 VGS = 0 V 1 V 3 V 5 V 10 V -1.4 1 10 100 1000 0.1 1 10 100 0.3 3 30 3 30 300 Crss Coss Ciss Common source VGS = 0 V f = 1 MHz Ta = 25°C 0 0 2 8 10 10 0 4 8 16 Common source ID = 2.5 A Ta = 25°C Pulse test 12 V VGS VDD = 24 V 20 30 40 4 12 VDS = 24 V 6 V 6 V 12 V 6 0.8 1.2 1.6 2 2.4 2.8 -80 -40 0 40 80 160 Common source VDS = 10 V ID = 1 mA Pulse test 120 0 50 100 150 250 -80 -40 0 40 80 160 Common source Pulse test 200 120 VGS = 4.5 V VGS = 10 V ID = 2.5 A, 1.2 A, 0.6 A ID = 2.5 A, 1.2 A, 0.6 A 0.4 25 75 125 175 0 0.2 0.6 0.8 1 0 50 100 150 200 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Dual operation (per device) (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Dual operation (per device) (Note 3b) (1) (2) (3) (4) t = 5 s |
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