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TC58DVM92A1FTI0 ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 3 Page - Toshiba Semiconductor

๋ถ€ํ’ˆ๋ช… TC58DVM92A1FTI0
์ƒ์„ธ๋‚ด์šฉ  TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
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TC58DVM92A1FTI0 ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 3 Page - Toshiba Semiconductor

 
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TC58DVM92A1FTI0
2003-07-11
3/44
VALID BLOCKS (1)
SYMBOL
PARAMETER
MIN
TYP.
MAX
UNIT
NVB
Number of Valid Blocks
4016
4096
Blocks
(1) The device occasionally contains unusable blocks. Refer to Application Note (14) toward the end of this document.
(2) The first block (block address #00) is guaranteed to be a valid block at the time of shipment.
RECOMMENDED DC OPERATING CONDITIONS
SYMBOL
PARAMETER
MIN
TYP.
MAX
UNIT
VCC
Power Supply Voltage
2.7
3.3
3.6
V
VIH
High Level input Voltage
2.0
VCC
0.3
V
VIL
Low Level Input Voltage
0.3*
0.8
V
*
2 V (pulse width lower than 20 ns)
DC CHARACTERISTICS (Ta
- 40ยฐ to 85ยฐC, VCC
2.7 V to 3.6 V)
SYMBOL
PARAMETER
CONDITION
MIN
TYP.
MAX
UNIT
IIL
Input Leakage Current
VIN
0 V to VCC
10
A
ILO
Output Leakage Current
VOUT
0 V to VCC
10
A
ICCO1
Operating Current (Serial Read)
CE
VIL, IOUT
0 mA, tcycle
50 ns
10
30
mA
ICCO3
Operating Current
(Command Input)
tcycle
50 ns
10
30
mA
ICCO4
Operating Current (Data Input)
tcycle
50 ns
10
30
mA
ICCO5
Operating Current
(Address Input)
tcycle
50 ns
10
30
mA
ICCO7
Programming Current
10
30
mA
ICCO8
Erasing Current
10
30
mA
ICCS1
Standby Current
CE
VIH, WP
0V/VCC
1
mA
ICCS2
Standby Current
CE
VCC
0.2 V, WP
0V/VCC
10
50
A
VOH
High Level Output Voltage
IOH
400 A
2.4
V
VOL
Low Level Output Voltage
IOL
2.1 mA
0.4
V
IOL (
BY
/
RY
)
Output Current of
BY
/
RY
pin
VOL
0.4 V
8
mA


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