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IRF250P225 데이터시트(PDF) 1 Page - Infineon Technologies AG |
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IRF250P225 데이터시트(HTML) 1 Page - Infineon Technologies AG |
1 / 17 page D S G G D S Gate Drain Source Applications UPS and Inverter applications Half-bridge and full-bridge topologies Resonant mode power supplies DC/DC and AC/DC converters OR-ing and redundant power switches Brushed and BLDC Motor drive applications Battery powered circuits Benefits Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dv/dt and di/dt Capability Pb-Free ; RoHS Compliant ; Halogen-Free Base part number Package Type Standard Pack Form Quantity IRF250P225 TO-247AC Tube 25 IRF250P225 Orderable Part Number VDSS 250V RDS(on)typ. 18m max 22m ID 69A TO-247AC IRF250P225 G D S D Final Datasheet Please read the important Notice and Warnings at the end of this document V1.0 www.infineon.com 2017-02-27 IRF250P225 IR MOSFET - StrongIRFET™ Figure 1 Typical On-Resistance vs. Gate Voltage Figure 2 Maximum Drain Current vs. Case Temperature 2 4 6 8 10 12 14 16 18 20 VGS,Gate -to -Source Voltage (V) 5 15 25 35 45 55 65 75 ID = 41A TJ = 25°C TJ = 125°C 25 50 75 100 125 150 175 TC , Case Temperature (°C) 0 15 30 45 60 75 |
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