CS220-8B

CS220-8D

CS220-8M

CS220-8N

SILICON CONTROLLED RECTIFIERS

8.0 AMP, 200 THRU 800 VOLT

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CS220-8B series

types are epoxy molded SCRs designed for sensing

circuit and control system applications.

MARKING: FULL PART NUMBER

MAXIMUM RATINGS: (TC=25°C unless otherwise noted)

CS220

SYMBOL

-8B

-8D

-8M

-8N

UNITS

Peak Repetitive Off-State Voltage

VDRM, VRRM

200

400

600

800

V

RMS On-State Current (TC=90°C)

IT(RMS)

8.0

A

Peak One Cycle Surge Current, t=10ms

ITSM

60

A

18

Peak Gate Power Dissipation, tp=10μs

PGM

40

W

Average Gate Power Dissipation

PG(AV)

1.0

W

Peak Forward Gate Current, tp=10μs

IFGM

4.0

A

Peak Forward Gate Voltage, tp=10μs

VFGM

16

V

Peak Reverse Gate Voltage, tp=10μs

VRGM

5.0

V

Critical Rate of Rise of On-State Current

di/dt

50

A/μs

Operating Junction Temperature

TJ

-40 to +125

°C

Storage Temperature

Tstg

-40 to +150

°C

Thermal Resistance

ΘJA

60

°C/W

Thermal Resistance

ΘJC

2.5

°C/W

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

IDRM, IRRM Rated VDRM, VRRM

10

μA

IDRM, IRRM Rated VDRM, VRRM, TC=125°C

2.0

mA

IGT

VD=12V, RL=10Ω

3.0

15

mA

IH

IT=100mA

7.3

20

mA

VGT

VD=12V, RL=10Ω

0.9

1.5

V

VTM

ITM=16A, tp=380μs

1.3

1.8

V

dv/dt

VD=⅔Rated VDRM, TC=125°C

200

V/μs

TO-220 CASE

R4 (24-October 2013)

www.centr a lsemi.com