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AM41DL3208G ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 61 Page - SPANSION

๋ถ€ํ’ˆ๋ช… AM41DL3208G
์ƒ์„ธ๋‚ด์šฉ  Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
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AM41DL3208G ๋ฐ์ดํ„ฐ์‹œํŠธ(HTML) 61 Page - SPANSION

 
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Am41DL3208G
February 13, 2002
P R E L IMINARY
AC CHARACTERISTICS
Notes:
1. UB#s and LB#s controlled, CIOs must be high.
2. tCW is measured from CE1#s going low to the end of write.
3. t
WR is measured from the end of write to the address change. tWR applied in case a write ends as CE1#s or WE# going high.
4. t
AS is measured from the address valid to the beginning of write.
5. A write occurs during the overlap (t
WP) of low CE#1 and low WE#. A write begins when CE1#s goes low and WE# goes low when
asserting UB#s or LB#s for a single byte operation or simultaneously asserting UB#s and LB#s for a double byte operation. A
write ends at the earliest transition when CE1#s goes high and WE# goes high. The t
WP is measured from the beginning of write
to the end of write.
Figure 32.
SRAM Write Cycleโ€”UB#s and LB#s Control
Address
Data Valid
UB#s, LB#s
WE#
Data In
Data Out
High-Z
High-Z
tWC
CE1#s
CE2s
tAW
tBW
tDW
tDH
tWR (See Note 3)
tAS
(See Note 4)
tCW
(See Note 2)
tCW (See Note 2)
tWP
(See Note 5)


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