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6N1136-X009 데이터시트(PDF) 1 Page - Vishay Siliconix

부품명 6N1136-X009
상세설명  High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 C Rated
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6N1135/ 6N1136
Document Number 83909
Rev. 1.5, 26-Oct-04
Vishay Semiconductors
www.vishay.com
1
i179081
1
2
3
4
8
7
6
5
C(VCC)
NC
A
C
NC
B(VB)
C(VO)
E (GND)
Pb
Pb-free
e3
High Speed Optocoupler, 1 MBd, Photodiode with Transistor
Output, 110 °C Rated
Features
• Operating Temperature from -55 °C to +110 °C
• Isolation Test Voltage: 5300 VRMS
• TTL Compatible
• High Bit Rates: 1.0 MBd
• Bandwidth 2.0 MHz
• Open-Collector Output
• External Base Wiring Possible
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
• UL 1577 - File No. E52744 System Code H or J
• DIN EN 60747-5-2 (VDE0884)
• CUL - File No. E52744, equivalent to CSA bulletin
5A
Description
The 6N1135 and 6N1136 are 110 °C rated optocou-
plers with a GaAIAs infrared emitting diode, optically
coupled with an integrated photo detector which con-
sists of a photo diode and a high-speed transistor in a
DIP-8 plastic package.
Signals can be transmitted between two electrically
separated circuits up to frequencies of 2.0 MHz. The
potential difference between the circuits to be coupled
should not exceed the maximum permissible refer-
ence voltages
Order Information
For additional information on the available options refer to
Option Information.
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Part
Remarks
6N1135
CTR
≥ 7 %, DIP-8
6N1136
CTR
≥ 19 %, DIP-8
6N1135-X007
CTR
≥ 7 %, SMD-8 (option 7)
6N1136-X006
CTR
≥ 19 %, DIP-8 400 mil (option 6)
6N1136-X007
CTR
≥ 19 %, SMD-8 (option 7)
6N1136-X009
CTR
≥ 19 %, SMD-8 (option 9)
Parameter
Test condition
Symbol
Value
Unit
Reverse voltages
VR
5.0
V
Forward current
IF
25
mA
Peak forward current
t = 1.0 ms, duty cycle 50 %
IFM
50
mA
Maximum surge forward current t
≤ 1.0 µs, 300 pulses/s
IFSM
1.0
A
Thermal resistance
Rth
700
K/W
Power dissipation
Tamb = 70 °C
Pdiss
45
mW


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