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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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NTE5520 데이터시트(PDF) 2 Page - NTE Electronics |
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NTE5520 데이터시트(HTML) 2 Page - NTE Electronics |
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2 / 2 page  Maximum Ratings and Characteristics (Cont’d): Conducting State (TJ = +125°C unless otherwise specified) RMS Forward Current, IT(rms) 25A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Forward Current (180 ° Conduction), IT(av) 16A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Surge Current (at 60Hz), ITSM 1/2 Cycle 150A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Cycles 110A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Cycles 90A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I2t for Fusing (at 60Hz half–wave), I2t 90A2sec . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Forward Voltage Drop at TJ = +25°C, (IF = 16Adc), VTM 1.7V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Characteristics Operating Junction Temperature Range, TJ –65 ° to +125°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage Temperature Range, Tstg –65 ° to +150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Max. Thermal Impedance, Junction–to–Case, RthJC 1.3 °C/W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Max. Thread Torque, Lubricated 30in. lbs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gate Parameters (TJ = +25°C unless otherwise specified) Gate Current to Trigger (VFB = 12V), IGT 40mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gate Voltage to Trigger Over Temperature Range (VFB = 12V), VGT 3.0V . . . . . . . . . . . . . . . . . . . . . Non–Triggering Gate Voltage at TJ = +125°C (Rated VFB), VGNT 0.25V . . . . . . . . . . . . . . . . . . . . . . . Peak Forward Gate Current, IGFRM 5A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Peak Reverse Gate Voltage, VGRM 5V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Peak Gate Power, PGM 5W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Average Gate Power, PG(AV) 0.5W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Switching State Typical Turn–On Time (IT = 10A, 10–90%, VDRM = 10V, TJ = +25°C), ton 3 µs . . . . . . . . . . . . . . . . . . Minimum di/dt (Linear to 5.0 IT(av)), di/dt 25A/ µs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Typical Turn–Off Time, tq (IT = 10A, TJ = +125°C, diR/dt = 10A/µs, dv/dt = 20Vµs Linear to 0.8 VDRM)50µs . . . . . . . . . Typical dv/dt (Exp. to VDRM), dv/dt 100V/ µs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .200 (5.08) Max .562 (14.28) Max 1.193 (30.33) Max .453 (11.5) Max Cathode Gate Anode 1/4–28 UNF–2A |
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