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1N3767 데이터시트(PDF) 1 Page - GeneSiC Semiconductor, Inc.

부품명 1N3767
상세설명  Silicon Standard Recovery Diode
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제조업체  GENESIC [GeneSiC Semiconductor, Inc.]
홈페이지  http://www.genesicsemi.com/
Logo GENESIC - GeneSiC Semiconductor, Inc.

1N3767 데이터시트(HTML) 1 Page - GeneSiC Semiconductor, Inc.

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VRRM = 700 V - 1000 V
IF = 35 A
Features
• High Surge Capability
DO-5 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter
Symbol
1N3765 (R) 1N3766 (R)
Unit
Repetitive peak reverse voltage
VRRM
700
800
V
• Types from 700 V to 1000 V VRRM
Silicon Standard
Recovery Diode
Conditions
1000
1N3765 thru 1N3768R
1N3768 (R)
900
1N3767 (R)
Maximum ratings, at Tj = 25 °C, unless otherwise specified
2. Reverse polarity (R): Stud is anode.
pp
g
RMS reverse voltage
VRMS
490
560
V
DC blocking voltage
VDC
700
800
V
Continuous forward current
IF
35
35
A
Operating temperature
Tj
-55 to 150 -55 to 150
°C
Storage temperature
Tstg
-55 to 150 -55 to 150
°C
Parameter
Symbol
1N3765 (R) 1N3766 (R)
Unit
Diode forward voltage
1.2
1.2
10
10
μA
10
10
mA
Thermal characteristics
Thermal resistance, junction -
case
RthJC
0.25
0.25
°C/W
-55 to 150
-55 to 150
TC = 25 °C, tp = 8.3 ms
700
1000
900
Surge non-repetitive forward
current, Half Sine Wave
IF,SM
-55 to 150
1N3768 (R)
10
10
1N3767 (R)
0.25
VR = 50 V, Tj = 140 °C
0.25
1.2
1.2
10
VR = 50 V, Tj = 25 °C
IF = 35 A, Tj = 25 °C
TC ≤ 140 °C
Conditions
630
475
475
-55 to 150
35
35
10
A
475
Reverse current
IR
VF
475
V
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Feb 2016
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
1


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