전자부품 데이터시트 검색엔진 |
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ST1000C22K1 데이터시트(PDF) 3 Page - International Rectifier |
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ST1000C22K1 데이터시트(HTML) 3 Page - International Rectifier |
3 / 7 page ST1000C..K Series 3 Bulletin I25202 rev. A 01/00 www.irf.com dv/dt Maximum critical rate of rise of off-state 500 V/µs T J = T J max., linear to 80% rated V DRM voltage I RRM Maximum peak reverse and off-state 100 µs T J = TJ max., rated VDRM/VRRM applied I DRM leakage current Parameter ST1000C..K Units Conditions Blocking di/dt Maximum non repetitive rate of rise 1000 A/µs Gate drive 20V, 20 Ω, t r < 1µs of turned-on current T J = TJ max., anode voltage < 80% V DRM t d Typical delay time 1.9 µs Gate current 1A, di g /dt = 1A/µs V d = 0.67% V DRM , T J = 25°C t q Typical turn-off time 300 A/µs I TM = 550A, T J = T J max, di/dt = 40A/µs, V R = 50V dv/dt = 20V/µs, Gate 0V 100 Ω, tp < 500µs Parameter ST1000C..K Units Conditions Switching Parameter ST1000C..K Units Conditions Triggering P GM Maximum peak gate power 16 W T J = T J max., tp < 5ms P G(AV) Maximum peak average gate power 3 W T J = T J max., f = 50Hz, d% = 50 I GM Maximum peak positive gate current 3.0 A T J = TJ max., tp < 5ms + V GM Maximum peak positive gate voltage 20 V - V GM Maximum peak negative gate voltage 5.0 V I GT DC gate current required to trigger TYP. MAX. 200 - T J = -40°C 100 200 mA T J =25°C 50 - T J = 125°C V GT DC gate voltage required to trigger 1.4 - T J = -40°C 1.1 3.0 V T J =25°C 0.9 - T J = 125°C I GD DC gate current not to trigger 10 mA T J = T J max. V GD DC gate voltage not to trigger 0.25 V Max. required gate trigger / current / voltage are the lowest value which will trigger all units 12V anode-to- cathode applied Max. gate current / voltage not to trigger is the max. value which will not trigger any units with rated V DRM anode-to-cathode applied |
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