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TC55V8512FT-12 데이터시트(HTML) 4 Page - Toshiba Semiconductor

부품명 TC55V8512FT-12
상세내용  TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
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제조사  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
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TC55V8512FT-12 데이터시트(HTML) 4 Page - Toshiba Semiconductor

 
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TC55V8512J/FT-12,-15
2001-12-19
4/10
AC CHARACTERISTICS (Ta
==== 0° to 70°C
(See Note 1)
, VDD
==== 3.3 V ±±±± 0.3 V)
READ CYCLE
TC55V8512J/FT
-12
-15
SYMBOL
PARAMETER
MIN
MAX
MIN
MAX
UNIT
tRC
Read Cycle Time
12
15
tACC
Address Access Time
12
15
tCO
Chip Enable Access Time
12
15
tOE
Output Enable Access Time
6
8
tOH
Output Data Hold Time from Address Change
3
4
tCOE
Output Enable Time from Chip Enable
3
4
tOEE
Output Enable Time from Output Enable
1
1
tCOD
Output Disable Time from Chip Enable
7
8
tODO
Output Disable Time from Output Enable
7
8
ns
WRITE CYCLE
TC55V8512J/FT
-12
-15
SYMBOL
PARAMETER
MIN
MAX
MIN
MAX
UNIT
tWC
Write Cycle Time
12
15
tWP
Write Pulse Width
8
9
tCW
Chip Enable to End of Write
10
12
tAW
Address Valid to End of Write
10
12
tAS
Address Setup Time
0
0
tWR
Write Recovery Time
0
0
tDS
Data Setup Time
7
8
tDH
Data Hold Time
0
0
tOEW
Output Enable Time from Write Enable
1
1
tODW
Output Disable Time from Write Enable
7
8
ns
AC TEST CONDITIONS
Fig.1
PARAMETER
TEST CONDITION
Input Pulse Level
3.0 V/ 0.0 V
Input Pulse Rise and Fall Time
2 ns
Input Timing Measurement
Reference Level
1.5 V
Output Timing Measurement
Reference Level
1.5 V
Output Load
Fig.1
I/O pin
CL = 30 pF
Z0 = 50 Ω
RL = 50 Ω
VL = 1.5 V
I/O pin
CL = 5 pF
870
(For tCOE, tOEE, tCOD,
tODO, tOEW and tODW)
3.3 V
1200


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